TY - JOUR
T1 - Effects of multi-ion impurity scattering on electron velocities in bulk GaAs
AU - Joshi, R. P.
AU - Ferry, D. K.
PY - 1992
Y1 - 1992
N2 - Many authors have calculated, and measured, the velocity-field curve in bulk GaAs. However, many new incorporations within a proper ensemble Monte Carlo simulation have improved greatly the ability to understand fully the physics inherent in the velocity-field curves. One such improvement, which has arisen from the treatment of the electron-impurity interaction via real-space molecular-dynamics approach, is the recognition that screening is overestimated in most simple approaches, and the typical electron interacts with many impurities simultaneously. Here, the authors incorporate these more complicated approaches to determine the velocity-field curve at densities above 3*1017 cm-3.
AB - Many authors have calculated, and measured, the velocity-field curve in bulk GaAs. However, many new incorporations within a proper ensemble Monte Carlo simulation have improved greatly the ability to understand fully the physics inherent in the velocity-field curves. One such improvement, which has arisen from the treatment of the electron-impurity interaction via real-space molecular-dynamics approach, is the recognition that screening is overestimated in most simple approaches, and the typical electron interacts with many impurities simultaneously. Here, the authors incorporate these more complicated approaches to determine the velocity-field curve at densities above 3*1017 cm-3.
UR - http://www.scopus.com/inward/record.url?scp=0026837468&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/7/3B/080
DO - 10.1088/0268-1242/7/3B/080
M3 - Article
AN - SCOPUS:0026837468
VL - 7
SP - B319-B321
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 3 B
M1 - 080
ER -