Effects of MBE growth on the optical properties of AlGaN quantum wells

W. Feng, G. Rajanna, S. Sohal, S. A. Nikishin, A. A. Bernussi, M. Holtz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Optical studies are reported of multiple quantum wells, based on AlGaN for emission in the deep ultraviolet. The materials are grown using gas source molecular beam epitaxy in a growth regime which transitions from purely two-dimensional to mixed two- and three-dimensional well formation. Low temperature photoluminescence and absorption measurements are used to obtain the Stokes shift, and temperature dependence is used to estimate the thermal activation energy associated with photoluminescence intensity decrease. Variations in these energies are attributed to the well morphologies.

Original languageEnglish
Title of host publicationControlling Material Properties and Charge-Carrier Interactions with Quantum-Dot Coupling
Pages14-18
Number of pages5
DOIs
StatePublished - 2011
Event2010 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2010Dec 3 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1289
ISSN (Print)0272-9172

Conference

Conference2010 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/29/1012/3/10

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