TY - GEN
T1 - Effects of MBE growth on the optical properties of AlGaN quantum wells
AU - Feng, W.
AU - Rajanna, G.
AU - Sohal, S.
AU - Nikishin, S. A.
AU - Bernussi, A. A.
AU - Holtz, M.
N1 - Funding Information:
The authors acknowledge support for this research from the National Science Foundation and the J. F Maddox Foundation.
PY - 2011
Y1 - 2011
N2 - Optical studies are reported of multiple quantum wells, based on AlGaN for emission in the deep ultraviolet. The materials are grown using gas source molecular beam epitaxy in a growth regime which transitions from purely two-dimensional to mixed two- and three-dimensional well formation. Low temperature photoluminescence and absorption measurements are used to obtain the Stokes shift, and temperature dependence is used to estimate the thermal activation energy associated with photoluminescence intensity decrease. Variations in these energies are attributed to the well morphologies.
AB - Optical studies are reported of multiple quantum wells, based on AlGaN for emission in the deep ultraviolet. The materials are grown using gas source molecular beam epitaxy in a growth regime which transitions from purely two-dimensional to mixed two- and three-dimensional well formation. Low temperature photoluminescence and absorption measurements are used to obtain the Stokes shift, and temperature dependence is used to estimate the thermal activation energy associated with photoluminescence intensity decrease. Variations in these energies are attributed to the well morphologies.
UR - http://www.scopus.com/inward/record.url?scp=84859050685&partnerID=8YFLogxK
U2 - 10.1557/opl.2011.1410
DO - 10.1557/opl.2011.1410
M3 - Conference contribution
AN - SCOPUS:84859050685
SN - 9781618395047
T3 - Materials Research Society Symposium Proceedings
SP - 14
EP - 18
BT - Controlling Material Properties and Charge-Carrier Interactions with Quantum-Dot Coupling
T2 - 2010 MRS Fall Meeting
Y2 - 29 November 2010 through 3 December 2010
ER -