Effects of growth temperature on indium incorporation in InAlN alloys grown by GSMBE on Si(111)

Md Rakib Uddin; Mahesh Pandikunta; Vladimir Mansurov; Sandeep Sohal; Denis Myasishchev; Georgiy M. Guryanov; Vladimir Kuryatkov; Mark Holtz; Sergey Nikishin

doi:10.1007/s11664-012-1967-z

Effects of growth temperature on indium incorporation in InAlN alloys grown by GSMBE on Si(111)

Md Rakib Uddin, Mahesh Pandikunta, Vladimir Mansurov, Sandeep Sohal, Denis Myasishchev, Georgiy M. Guryanov, Vladimir Kuryatkov, Mark Holtz, Sergey Nikishin

Electrical and Computer Engineering

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1 Scopus citations

Abstract

In _xAl _1-xN alloys with low indium content (0.025< x< 0.080) were grown on Si(111) substrates, with an AlN buffer layer, using gas source molecular beam epitaxy with ammonia under nitrogen-rich conditions. Composition was varied by changing the growth temperature from 580°C to 660°C. Growth temperature in excess of 580°C was found to be necessary to obtain compositional uniformity. As temperature was varied from 590°C to 660°C, both the growth rate and indium incorporation decreased substantially. Rising In content observed near the surface of each sample was attributed to native indium oxide formation.

Original language	English
Pages (from-to)	824-829
Number of pages	6
Journal	Journal of Electronic Materials
Volume	41
Issue number	5
DOIs	https://doi.org/10.1007/s11664-012-1967-z
State	Published - May 2012

Keywords

Crystalline quality
GSMBE with ammonia
In incorporation
InAlN
Optical bandgap
Sixfold symmetry

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10.1007/s11664-012-1967-z

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@article{66d05a8e5c8e4bcb8d1e22bea23897d6,

title = "Effects of growth temperature on indium incorporation in InAlN alloys grown by GSMBE on Si(111)",

abstract = "In xAl 1-xN alloys with low indium content (0.025< x< 0.080) were grown on Si(111) substrates, with an AlN buffer layer, using gas source molecular beam epitaxy with ammonia under nitrogen-rich conditions. Composition was varied by changing the growth temperature from 580°C to 660°C. Growth temperature in excess of 580°C was found to be necessary to obtain compositional uniformity. As temperature was varied from 590°C to 660°C, both the growth rate and indium incorporation decreased substantially. Rising In content observed near the surface of each sample was attributed to native indium oxide formation.",

keywords = "Crystalline quality, GSMBE with ammonia, In incorporation, InAlN, Optical bandgap, Sixfold symmetry",

author = "Uddin, {Md Rakib} and Mahesh Pandikunta and Vladimir Mansurov and Sandeep Sohal and Denis Myasishchev and Guryanov, {Georgiy M.} and Vladimir Kuryatkov and Mark Holtz and Sergey Nikishin",

note = "Funding Information: This work was supported by the U.S. National Science Foundation (ECS-0609416) and the State of Texas NHARP (Contract No. 003644-0042-2009). The authors acknowledge V. A. Elyukhin and S. Yu. Karpov for useful discussions.",

year = "2012",

month = may,

doi = "10.1007/s11664-012-1967-z",

language = "English",

volume = "41",

pages = "824--829",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "5",

}

Effects of growth temperature on indium incorporation in InAlN alloys grown by GSMBE on Si(111). / Uddin, Md Rakib; Pandikunta, Mahesh; Mansurov, Vladimir; Sohal, Sandeep; Myasishchev, Denis; Guryanov, Georgiy M.; Kuryatkov, Vladimir; Holtz, Mark; Nikishin, Sergey.

In: Journal of Electronic Materials, Vol. 41, No. 5, 05.2012, p. 824-829.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effects of growth temperature on indium incorporation in InAlN alloys grown by GSMBE on Si(111)

AU - Uddin, Md Rakib

AU - Pandikunta, Mahesh

AU - Mansurov, Vladimir

AU - Sohal, Sandeep

AU - Myasishchev, Denis

AU - Guryanov, Georgiy M.

AU - Kuryatkov, Vladimir

AU - Holtz, Mark

AU - Nikishin, Sergey

N1 - Funding Information: This work was supported by the U.S. National Science Foundation (ECS-0609416) and the State of Texas NHARP (Contract No. 003644-0042-2009). The authors acknowledge V. A. Elyukhin and S. Yu. Karpov for useful discussions.

PY - 2012/5

Y1 - 2012/5

N2 - In xAl 1-xN alloys with low indium content (0.025< x< 0.080) were grown on Si(111) substrates, with an AlN buffer layer, using gas source molecular beam epitaxy with ammonia under nitrogen-rich conditions. Composition was varied by changing the growth temperature from 580°C to 660°C. Growth temperature in excess of 580°C was found to be necessary to obtain compositional uniformity. As temperature was varied from 590°C to 660°C, both the growth rate and indium incorporation decreased substantially. Rising In content observed near the surface of each sample was attributed to native indium oxide formation.

AB - In xAl 1-xN alloys with low indium content (0.025< x< 0.080) were grown on Si(111) substrates, with an AlN buffer layer, using gas source molecular beam epitaxy with ammonia under nitrogen-rich conditions. Composition was varied by changing the growth temperature from 580°C to 660°C. Growth temperature in excess of 580°C was found to be necessary to obtain compositional uniformity. As temperature was varied from 590°C to 660°C, both the growth rate and indium incorporation decreased substantially. Rising In content observed near the surface of each sample was attributed to native indium oxide formation.

KW - Crystalline quality

KW - GSMBE with ammonia

KW - In incorporation

KW - InAlN

KW - Optical bandgap

KW - Sixfold symmetry

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U2 - 10.1007/s11664-012-1967-z

DO - 10.1007/s11664-012-1967-z

M3 - Article

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VL - 41

SP - 824

EP - 829

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -

Effects of growth temperature on indium incorporation in InAlN alloys grown by GSMBE on Si(111)

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