Effects of growth temperature on indium incorporation in InAlN alloys grown by GSMBE on Si(111)

Md Rakib Uddin, Mahesh Pandikunta, Vladimir Mansurov, Sandeep Sohal, Denis Myasishchev, Georgiy M. Guryanov, Vladimir Kuryatkov, Mark Holtz, Sergey Nikishin

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Abstract

In xAl 1-xN alloys with low indium content (0.025< x< 0.080) were grown on Si(111) substrates, with an AlN buffer layer, using gas source molecular beam epitaxy with ammonia under nitrogen-rich conditions. Composition was varied by changing the growth temperature from 580°C to 660°C. Growth temperature in excess of 580°C was found to be necessary to obtain compositional uniformity. As temperature was varied from 590°C to 660°C, both the growth rate and indium incorporation decreased substantially. Rising In content observed near the surface of each sample was attributed to native indium oxide formation.

Original languageEnglish
Pages (from-to)824-829
Number of pages6
JournalJournal of Electronic Materials
Volume41
Issue number5
DOIs
StatePublished - May 2012

Keywords

  • Crystalline quality
  • GSMBE with ammonia
  • In incorporation
  • InAlN
  • Optical bandgap
  • Sixfold symmetry

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    Uddin, M. R., Pandikunta, M., Mansurov, V., Sohal, S., Myasishchev, D., Guryanov, G. M., Kuryatkov, V., Holtz, M., & Nikishin, S. (2012). Effects of growth temperature on indium incorporation in InAlN alloys grown by GSMBE on Si(111). Journal of Electronic Materials, 41(5), 824-829. https://doi.org/10.1007/s11664-012-1967-z