Abstract
In xAl 1-xN alloys with low indium content (0.025< x< 0.080) were grown on Si(111) substrates, with an AlN buffer layer, using gas source molecular beam epitaxy with ammonia under nitrogen-rich conditions. Composition was varied by changing the growth temperature from 580°C to 660°C. Growth temperature in excess of 580°C was found to be necessary to obtain compositional uniformity. As temperature was varied from 590°C to 660°C, both the growth rate and indium incorporation decreased substantially. Rising In content observed near the surface of each sample was attributed to native indium oxide formation.
Original language | English |
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Pages (from-to) | 824-829 |
Number of pages | 6 |
Journal | Journal of Electronic Materials |
Volume | 41 |
Issue number | 5 |
DOIs | |
State | Published - May 2012 |
Keywords
- Crystalline quality
- GSMBE with ammonia
- In incorporation
- InAlN
- Optical bandgap
- Sixfold symmetry