Effects of growth pressure on erbium doped GaN infrared emitters synthesized by metal organic chemical vapor deposition

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Cite this

@article{b1860c0388204a93b4424dd859e08a2d,

title = "Effects of growth pressure on erbium doped GaN infrared emitters synthesized by metal organic chemical vapor deposition",

author = "Feng, {i w} and Jing Li and Jingyu Lin and Hongxing Jiang and Zavada, {J M}",

year = "2012",

month = sep,

language = "English",

pages = "1095",

journal = "Optical Materials Express",

}