Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes

Talal Al tahtamouni, Jingyu Lin, Hongxing Jiang

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)123501
JournalJournal of Applied Physics
StatePublished - Mar 2013

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