Effects of double layer AlN buffer layers on properties of Si-doped Al xGa1-xN for improved performance of deep ultraviolet light emitting diodes

T. M. Al Tahtamouni, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticle

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Abstract

Si-doped Al0.77Ga0.23N epilayers were grown on AlN/sapphire templates by metal organic chemical vapor deposition using double AlN buffer layers. It was found that the use of double AlN buffer layers improved the overall material quality of the Si-doped Al0.77Ga 0.23N epilayers, as evidenced in the decreased density of screw dislocations and surface pits and increased emission intensity ratio of the band-edge to the deep level impurity transition. Hall effect measurements also indicated improved n-type conductivity. The performance of the deep ultraviolet light-emitting diodes fabricated using double buffer layers was significantly improved, as manifested by enhanced output power and reduced turn-on voltage.

Original languageEnglish
Article number123501
JournalJournal of Applied Physics
Volume113
Issue number12
DOIs
StatePublished - Mar 28 2013

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