We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under the subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for photoexcited electron-hole pair density of n ≤ 1015cm-3. As the density of photoexcited carders increased we observed a significant decrease of the average electric field. In particular, for n = 1018cm-3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.
|Number of pages||9|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 1998|
|Event||Ultrafast Phenomena in Semiconductors II - San Jose, CA, United States|
Duration: Jan 28 1998 → Jan 29 1998