Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation

R. P. Joshi, K. T. Tsen, D. K. Ferry, A. Salvador, A. Botcharev, H. Morkoc

Research output: Contribution to journalConference articlepeer-review

Abstract

We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under the subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for photoexcited electron-hole pair density of n ≤ 1015cm-3. As the density of photoexcited carders increased we observed a significant decrease of the average electric field. In particular, for n = 1018cm-3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.

Original languageEnglish
Pages (from-to)283-291
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3277
DOIs
StatePublished - 1998
EventUltrafast Phenomena in Semiconductors II - San Jose, CA, United States
Duration: Jan 28 1998Jan 29 1998

Fingerprint Dive into the research topics of 'Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under the subpicosecond laser excitation'. Together they form a unique fingerprint.

Cite this