Effects of barrier height fluctuations and electron tunneling on the reverse characteristics of 6H-SiC Schottky contacts

L. Zheng; R. P. Joshi; Christian Fazi

doi:10.1063/1.369735

Effects of barrier height fluctuations and electron tunneling on the reverse characteristics of 6H-SiC Schottky contacts

L. Zheng, R. P. Joshi, Christian Fazi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Theoretical calculations of barrier height fluctuations and electron tunneling across a Schottky barrier diodes in 6H-silicon carbide are presented. Results showed that barrier height inhomogeneities lead to reverse current densities with orders of magnitude higher than obtained from a simple theory.

Original language	English
Pages (from-to)	3701-3707
Number of pages	7
Journal	Journal of Applied Physics
Volume	85
Issue number	7
DOIs	https://doi.org/10.1063/1.369735
State	Published - Apr 1 1999

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title = "Effects of barrier height fluctuations and electron tunneling on the reverse characteristics of 6H-SiC Schottky contacts",

abstract = "Theoretical calculations of barrier height fluctuations and electron tunneling across a Schottky barrier diodes in 6H-silicon carbide are presented. Results showed that barrier height inhomogeneities lead to reverse current densities with orders of magnitude higher than obtained from a simple theory.",

author = "L. Zheng and Joshi, {R. P.} and Christian Fazi",

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AU - Zheng, L.

AU - Joshi, R. P.

AU - Fazi, Christian

PY - 1999/4/1

Y1 - 1999/4/1

N2 - Theoretical calculations of barrier height fluctuations and electron tunneling across a Schottky barrier diodes in 6H-silicon carbide are presented. Results showed that barrier height inhomogeneities lead to reverse current densities with orders of magnitude higher than obtained from a simple theory.

AB - Theoretical calculations of barrier height fluctuations and electron tunneling across a Schottky barrier diodes in 6H-silicon carbide are presented. Results showed that barrier height inhomogeneities lead to reverse current densities with orders of magnitude higher than obtained from a simple theory.

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U2 - 10.1063/1.369735

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Effects of barrier height fluctuations and electron tunneling on the reverse characteristics of 6H-SiC Schottky contacts

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