Effects of barrier height fluctuations and electron tunneling on the reverse characteristics of 6H-SiC Schottky contacts

L. Zheng, R. P. Joshi, Christian Fazi

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

Theoretical calculations of barrier height fluctuations and electron tunneling across a Schottky barrier diodes in 6H-silicon carbide are presented. Results showed that barrier height inhomogeneities lead to reverse current densities with orders of magnitude higher than obtained from a simple theory.

Original languageEnglish
Pages (from-to)3701-3707
Number of pages7
JournalJournal of Applied Physics
Volume85
Issue number7
DOIs
StatePublished - Apr 1 1999

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