Abstract
Theoretical calculations of barrier height fluctuations and electron tunneling across a Schottky barrier diodes in 6H-silicon carbide are presented. Results showed that barrier height inhomogeneities lead to reverse current densities with orders of magnitude higher than obtained from a simple theory.
Original language | English |
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Pages (from-to) | 3701-3707 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 85 |
Issue number | 7 |
DOIs | |
State | Published - Apr 1 1999 |