Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction

D. R. Hang; C. T. Liang; C. F. Huang; Y. H. Chang; Y. F. Chen; H. X. Jiang; J. Y. Lin

doi:10.1063/1.1380245

Effective mass of two-dimensional electron gas in an Al_0.2Ga_0.8N/GaN heterojunction

D. R. Hang, C. T. Liang, C. F. Huang, Y. H. Chang, Y. F. Chen, H. X. Jiang, J. Y. Lin

Electrical and Computer Engineering

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32 Scopus citations

Abstract

We have performed a magnetotransport study on an AlGaN/GaN heterostructure at low temperatures. The effective-mass values have been evaluated by analyzing the exact form of the temperature-dependent Shubnikov-de Haas oscillation function. The values obtained increase with the magnetic field. This mass enhancement is attributed to conduction-band nonparabolicity. The effective-mass variation with the magnetic field was extrapolated to zero field, together with further correction due to the triangular confinement of the carriers, yielding an effective mass of 0.185 ± 0.005 of the free-electron mass. Our result is in excellent agreement with the results obtained by first-principle calculations and the tight-binding method, and suggest the significance of magnetic-field-induced nonparabolicity in transport measurements.

Original language	English
Pages (from-to)	66-68
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	1
DOIs	https://doi.org/10.1063/1.1380245
State	Published - Jul 2 2001

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title = "Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction",

abstract = "We have performed a magnetotransport study on an AlGaN/GaN heterostructure at low temperatures. The effective-mass values have been evaluated by analyzing the exact form of the temperature-dependent Shubnikov-de Haas oscillation function. The values obtained increase with the magnetic field. This mass enhancement is attributed to conduction-band nonparabolicity. The effective-mass variation with the magnetic field was extrapolated to zero field, together with further correction due to the triangular confinement of the carriers, yielding an effective mass of 0.185 ± 0.005 of the free-electron mass. Our result is in excellent agreement with the results obtained by first-principle calculations and the tight-binding method, and suggest the significance of magnetic-field-induced nonparabolicity in transport measurements.",

author = "Hang, {D. R.} and Liang, {C. T.} and Huang, {C. F.} and Chang, {Y. H.} and Chen, {Y. F.} and Jiang, {H. X.} and Lin, {J. Y.}",

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T1 - Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction

AU - Hang, D. R.

AU - Liang, C. T.

AU - Huang, C. F.

AU - Chang, Y. H.

AU - Chen, Y. F.

AU - Jiang, H. X.

AU - Lin, J. Y.

PY - 2001/7/2

Y1 - 2001/7/2

N2 - We have performed a magnetotransport study on an AlGaN/GaN heterostructure at low temperatures. The effective-mass values have been evaluated by analyzing the exact form of the temperature-dependent Shubnikov-de Haas oscillation function. The values obtained increase with the magnetic field. This mass enhancement is attributed to conduction-band nonparabolicity. The effective-mass variation with the magnetic field was extrapolated to zero field, together with further correction due to the triangular confinement of the carriers, yielding an effective mass of 0.185 ± 0.005 of the free-electron mass. Our result is in excellent agreement with the results obtained by first-principle calculations and the tight-binding method, and suggest the significance of magnetic-field-induced nonparabolicity in transport measurements.

AB - We have performed a magnetotransport study on an AlGaN/GaN heterostructure at low temperatures. The effective-mass values have been evaluated by analyzing the exact form of the temperature-dependent Shubnikov-de Haas oscillation function. The values obtained increase with the magnetic field. This mass enhancement is attributed to conduction-band nonparabolicity. The effective-mass variation with the magnetic field was extrapolated to zero field, together with further correction due to the triangular confinement of the carriers, yielding an effective mass of 0.185 ± 0.005 of the free-electron mass. Our result is in excellent agreement with the results obtained by first-principle calculations and the tight-binding method, and suggest the significance of magnetic-field-induced nonparabolicity in transport measurements.

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Effective mass of two-dimensional electron gas in an Al_0.2Ga_0.8N/GaN heterojunction

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