Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction

D. R. Hang, C. T. Liang, C. F. Huang, Y. H. Chang, Y. F. Chen, H. X. Jiang, J. Y. Lin

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We have performed a magnetotransport study on an AlGaN/GaN heterostructure at low temperatures. The effective-mass values have been evaluated by analyzing the exact form of the temperature-dependent Shubnikov-de Haas oscillation function. The values obtained increase with the magnetic field. This mass enhancement is attributed to conduction-band nonparabolicity. The effective-mass variation with the magnetic field was extrapolated to zero field, together with further correction due to the triangular confinement of the carriers, yielding an effective mass of 0.185 ± 0.005 of the free-electron mass. Our result is in excellent agreement with the results obtained by first-principle calculations and the tight-binding method, and suggest the significance of magnetic-field-induced nonparabolicity in transport measurements.

Original languageEnglish
Pages (from-to)66-68
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - Jul 2 2001


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