Effect of stress and free-carrier concentration on photoluminescence in InN

D. Y. Song; M. E. Holtz; A. Chandolu; A. Bernussi; S. A. Nikishin; M. W. Holtz; I. Gherasoiu

doi:10.1063/1.2899941

Effect of stress and free-carrier concentration on photoluminescence in InN

D. Y. Song, M. E. Holtz, A. Chandolu, A. Bernussi, S. A. Nikishin, M. W. Holtz, I. Gherasoiu

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We report photoluminescence (PL) studies of InN epilayers grown by plasma-assisted molecular beam epitaxy with free-electron concentration ranging from 5.9× 1017 to 4.2× 1018 cm-3. X-ray diffraction measurements are used to determine strains, which are best described as a combination of hydrostatic and biaxial. The PL energy is affected by both strains along with free-carrier concentration through band filling. PL spectra are used to estimate the dependence of the Fermi level on free-carrier concentration, taking strain into account. The fundamental energy gap is found to be ∼0.70 eV. PL broadening is well described based on band filling.

Original language	English
Article number	121913
Journal	Applied Physics Letters
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.2899941
State	Published - 2008

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title = "Effect of stress and free-carrier concentration on photoluminescence in InN",

abstract = "We report photoluminescence (PL) studies of InN epilayers grown by plasma-assisted molecular beam epitaxy with free-electron concentration ranging from 5.9× 1017 to 4.2× 1018 cm-3. X-ray diffraction measurements are used to determine strains, which are best described as a combination of hydrostatic and biaxial. The PL energy is affected by both strains along with free-carrier concentration through band filling. PL spectra are used to estimate the dependence of the Fermi level on free-carrier concentration, taking strain into account. The fundamental energy gap is found to be ∼0.70 eV. PL broadening is well described based on band filling.",

author = "Song, {D. Y.} and Holtz, {M. E.} and A. Chandolu and A. Bernussi and Nikishin, {S. A.} and Holtz, {M. W.} and I. Gherasoiu",

note = "Funding Information: Work at Texas Tech University was supported by the National Science Foundation (ECS-0609416 and ECS-0304224), U.S. Army CERDEC Contract (W15P7T-07-D-P040), and the J. F Maddox Foundation. ",

year = "2008",

doi = "10.1063/1.2899941",

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volume = "92",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Effect of stress and free-carrier concentration on photoluminescence in InN

AU - Song, D. Y.

AU - Holtz, M. E.

AU - Chandolu, A.

AU - Bernussi, A.

AU - Nikishin, S. A.

AU - Holtz, M. W.

AU - Gherasoiu, I.

N1 - Funding Information: Work at Texas Tech University was supported by the National Science Foundation (ECS-0609416 and ECS-0304224), U.S. Army CERDEC Contract (W15P7T-07-D-P040), and the J. F Maddox Foundation.

PY - 2008

Y1 - 2008

N2 - We report photoluminescence (PL) studies of InN epilayers grown by plasma-assisted molecular beam epitaxy with free-electron concentration ranging from 5.9× 1017 to 4.2× 1018 cm-3. X-ray diffraction measurements are used to determine strains, which are best described as a combination of hydrostatic and biaxial. The PL energy is affected by both strains along with free-carrier concentration through band filling. PL spectra are used to estimate the dependence of the Fermi level on free-carrier concentration, taking strain into account. The fundamental energy gap is found to be ∼0.70 eV. PL broadening is well described based on band filling.

AB - We report photoluminescence (PL) studies of InN epilayers grown by plasma-assisted molecular beam epitaxy with free-electron concentration ranging from 5.9× 1017 to 4.2× 1018 cm-3. X-ray diffraction measurements are used to determine strains, which are best described as a combination of hydrostatic and biaxial. The PL energy is affected by both strains along with free-carrier concentration through band filling. PL spectra are used to estimate the dependence of the Fermi level on free-carrier concentration, taking strain into account. The fundamental energy gap is found to be ∼0.70 eV. PL broadening is well described based on band filling.

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Effect of stress and free-carrier concentration on photoluminescence in InN

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