Abstract
We report photoluminescence (PL) studies of InN epilayers grown by plasma-assisted molecular beam epitaxy with free-electron concentration ranging from 5.9× 1017 to 4.2× 1018 cm-3. X-ray diffraction measurements are used to determine strains, which are best described as a combination of hydrostatic and biaxial. The PL energy is affected by both strains along with free-carrier concentration through band filling. PL spectra are used to estimate the dependence of the Fermi level on free-carrier concentration, taking strain into account. The fundamental energy gap is found to be ∼0.70 eV. PL broadening is well described based on band filling.
Original language | English |
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Article number | 121913 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 12 |
DOIs | |
State | Published - 2008 |