Effect of stress and free-carrier concentration on photoluminescence in InN

D. Y. Song, M. E. Holtz, A. Chandolu, A. Bernussi, S. A. Nikishin, M. W. Holtz, I. Gherasoiu

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Abstract

We report photoluminescence (PL) studies of InN epilayers grown by plasma-assisted molecular beam epitaxy with free-electron concentration ranging from 5.9× 1017 to 4.2× 1018 cm-3. X-ray diffraction measurements are used to determine strains, which are best described as a combination of hydrostatic and biaxial. The PL energy is affected by both strains along with free-carrier concentration through band filling. PL spectra are used to estimate the dependence of the Fermi level on free-carrier concentration, taking strain into account. The fundamental energy gap is found to be ∼0.70 eV. PL broadening is well described based on band filling.

Original languageEnglish
Article number121913
JournalApplied Physics Letters
Volume92
Issue number12
DOIs
StatePublished - 2008

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