Abstract
We report cryogenic high-pressure measurements of a defect-related emission at 1.25 eV in silicon-doped GaAs. The pressure measurements prove that the 1.25-eV photon energy is relative to the conduction band, implying a deep defect level 0.30 eV above the valence band and an electron-capture process from the conduction band into the defect. The defect level moves up in the band gap at a rate of 23±3 meV/GPa. These results are consistent with a vacancy-related defect level, possibly stemming from a gallium-vacancy-silicon-at-gallium (second-nearest-neighbor) defect complex.
Original language | English |
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Pages (from-to) | 14706-14709 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 50 |
Issue number | 19 |
DOIs | |
State | Published - 1994 |