Effect of pressure on defect-related emission in heavily silicon-doped GaAs

M. Holtz, T. Sauncy, T. Dallas, S. Massie

Research output: Contribution to journalArticlepeer-review

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Abstract

We report cryogenic high-pressure measurements of a defect-related emission at 1.25 eV in silicon-doped GaAs. The pressure measurements prove that the 1.25-eV photon energy is relative to the conduction band, implying a deep defect level 0.30 eV above the valence band and an electron-capture process from the conduction band into the defect. The defect level moves up in the band gap at a rate of 23±3 meV/GPa. These results are consistent with a vacancy-related defect level, possibly stemming from a gallium-vacancy-silicon-at-gallium (second-nearest-neighbor) defect complex.

Original languageEnglish
Pages (from-to)14706-14709
Number of pages4
JournalPhysical Review B
Volume50
Issue number19
DOIs
StatePublished - 1994

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