TY - GEN
T1 - Effect of passivation on III-nitride/silicon tandem solar cells
AU - Ekinci, Huseyin
AU - Kuryatkov, Vladimir V.
AU - Gherasoiu, Iulian
AU - Nikishin, Sergey A.
N1 - Publisher Copyright:
© 2015 Chamber of Electrical Engineers of Turkey.
PY - 2016/1/28
Y1 - 2016/1/28
N2 - We have studied the impact of mesa sidewall passivation by SiO2 on characteristics of III-nitride/silicon tandem solar cells. These dual junction solar cells were fabricated from standard n-type Si (111) substrates with III-nitride epitaxial layers grown by plasma-assisted molecular beam epitaxy (PAMBE). Photovoltaic testing was experimentally carried out under a solar simulator before and after the 100nm-thick SiO2 passivation of these solar cell mesa side walls. We have found that the sidewall passivation improves the efficiency of these solar cells. The open-circuit voltage (VOC) increased from 1.45 to 1.53 V, the short-circuit current density (JSC) enhanced from 0.116 to 0.121 mA/cm2, the fill factor increased from 39.7 to 41.5% under the solar simulator illumination yielding 13.3% conversion efficiency improvement after passivation. Moreover, IPCE (the incident monochromatic photon to current conversion efficiency) also moderately increased by approximately 13% in the visible region after passivation.
AB - We have studied the impact of mesa sidewall passivation by SiO2 on characteristics of III-nitride/silicon tandem solar cells. These dual junction solar cells were fabricated from standard n-type Si (111) substrates with III-nitride epitaxial layers grown by plasma-assisted molecular beam epitaxy (PAMBE). Photovoltaic testing was experimentally carried out under a solar simulator before and after the 100nm-thick SiO2 passivation of these solar cell mesa side walls. We have found that the sidewall passivation improves the efficiency of these solar cells. The open-circuit voltage (VOC) increased from 1.45 to 1.53 V, the short-circuit current density (JSC) enhanced from 0.116 to 0.121 mA/cm2, the fill factor increased from 39.7 to 41.5% under the solar simulator illumination yielding 13.3% conversion efficiency improvement after passivation. Moreover, IPCE (the incident monochromatic photon to current conversion efficiency) also moderately increased by approximately 13% in the visible region after passivation.
UR - http://www.scopus.com/inward/record.url?scp=84963853588&partnerID=8YFLogxK
U2 - 10.1109/ELECO.2015.7394590
DO - 10.1109/ELECO.2015.7394590
M3 - Conference contribution
AN - SCOPUS:84963853588
T3 - ELECO 2015 - 9th International Conference on Electrical and Electronics Engineering
SP - 148
EP - 151
BT - ELECO 2015 - 9th International Conference on Electrical and Electronics Engineering
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 9th International Conference on Electrical and Electronics Engineering, ELECO 2015
Y2 - 26 November 2015 through 28 November 2015
ER -