@article{788804f6036445f3828960d6419d18bc,
title = "Effect of impurity incorporation on emission wavelength in cathodoluminescence spectrum image study of GaN pyramids grown by selective area epitaxy",
abstract = "Metal-organic chemical vapor deposition has been used for selective epitaxy of GaN pyramids ranging in size from over 1 μm to 500 nm in length at the base. Pyramids are terminated by { 1 1- 01 } crystal facets. The optical properties of the pyramids are investigated by cathodoluminescence (CL) in a scanning electron microscope. CL spectrum imaging reveals the pyramid apices to emit light at ∼363.4 nm corresponding to the emission wavelength of relaxed GaN. As the CL excitation is moved away from the apex a systematic redshift is observed. The redshift is ∼4 nm for pyramids with 3 μm base dimension and ∼2 nm for the 500 nm pyramids. The shift is attributed to diffusion of silicon and oxygen into the GaN pyramids due to SiO2 mask decomposition with negligible contribution from stress. The observations are backed by finite element simulations of diffusion and stress.",
author = "Song, {D. Y.} and A. Chandolu and N. Stojanovic and Nikishin, {S. A.} and M. Holtz",
note = "Funding Information: The work at Texas Tech University was supported by the National Science Foundation (Contract Nos. ECS-0609416 and ECS-0304224), by the U.S. Army CERDEC (Contract No. W15P7T-07-D-P040), and by the J. F Maddox Foundation. FIG. 1. SEM images of the (a) array of 3 μ m pyramids, (b) array of 500 nm pyramids, and (c) Wulff construction of pyramids. FIG. 2. SEM-based CL measurements taken from the apices of 3 μ m (solid) and 500 nm (dashed) pyramids. FIG. 3. Micro-Raman spectra of 3 μ m pyramid apex (solid) and reference GaN (dashed). FIG. 4. CL spectrum image of peak wavelength (a) for the 3 μ m pyramid from the region corresponding to dashed line in (b). (c) Top view of 3D finite element simulations are shown for stress,(d) silicon concentration, and (e) oxygen concentration. FIG. 5. CL spectrum image of peak wavelength (a) for the 500 nm pyramid from the region corresponding to dashed line in (b). (c) Top view of 3D finite element simulations are shown for stress, (d) silicon concentration, and (e) oxygen concentration. ",
year = "2008",
doi = "10.1063/1.2978382",
language = "English",
volume = "104",
journal = "Journal of Applied Physics",
issn = "0021-8979",
number = "6",
}