Effect of free-carrier concentration on the phase transition and vibrational properties of VO2

M. Nazari; Changhong Chen; A. A. Bernussi; Z. Y. Fan; M. Holtz

doi:10.1063/1.3626032

Effect of free-carrier concentration on the phase transition and vibrational properties of VO₂

M. Nazari, Changhong Chen, A. A. Bernussi, Z. Y. Fan, M. Holtz

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The effects of native defect doping concentration on the phase transition properties of vanadium dioxide thin films are investigated. The onset temperature of the metal-insulator transition is found to depend on the free-carrier concentration and to correlate with an abrupt change in the temperature dependence of the vibrational energies of the V-O related Raman band. A phase diagram is proposed identifying insulating, intermediate, and conducting regimes. The intermediate region is attributed to a mixed phase.

Original language	English
Article number	071902
Journal	Applied Physics Letters
Volume	99
Issue number	7
DOIs	https://doi.org/10.1063/1.3626032
State	Published - Aug 15 2011

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abstract = "The effects of native defect doping concentration on the phase transition properties of vanadium dioxide thin films are investigated. The onset temperature of the metal-insulator transition is found to depend on the free-carrier concentration and to correlate with an abrupt change in the temperature dependence of the vibrational energies of the V-O related Raman band. A phase diagram is proposed identifying insulating, intermediate, and conducting regimes. The intermediate region is attributed to a mixed phase.",

author = "M. Nazari and Changhong Chen and Bernussi, {A. A.} and Fan, {Z. Y.} and M. Holtz",

note = "Funding Information: The authors acknowledge support from the U.S. Army (W15P7T-07-D-P040) and the J. F Maddox Foundation.",

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AU - Chen, Changhong

AU - Bernussi, A. A.

AU - Fan, Z. Y.

AU - Holtz, M.

N1 - Funding Information: The authors acknowledge support from the U.S. Army (W15P7T-07-D-P040) and the J. F Maddox Foundation.

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N2 - The effects of native defect doping concentration on the phase transition properties of vanadium dioxide thin films are investigated. The onset temperature of the metal-insulator transition is found to depend on the free-carrier concentration and to correlate with an abrupt change in the temperature dependence of the vibrational energies of the V-O related Raman band. A phase diagram is proposed identifying insulating, intermediate, and conducting regimes. The intermediate region is attributed to a mixed phase.

AB - The effects of native defect doping concentration on the phase transition properties of vanadium dioxide thin films are investigated. The onset temperature of the metal-insulator transition is found to depend on the free-carrier concentration and to correlate with an abrupt change in the temperature dependence of the vibrational energies of the V-O related Raman band. A phase diagram is proposed identifying insulating, intermediate, and conducting regimes. The intermediate region is attributed to a mixed phase.

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Effect of free-carrier concentration on the phase transition and vibrational properties of VO₂

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