Effect of free-carrier concentration on the phase transition and vibrational properties of VO2

M. Nazari, Changhong Chen, A. A. Bernussi, Z. Y. Fan, M. Holtz

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

The effects of native defect doping concentration on the phase transition properties of vanadium dioxide thin films are investigated. The onset temperature of the metal-insulator transition is found to depend on the free-carrier concentration and to correlate with an abrupt change in the temperature dependence of the vibrational energies of the V-O related Raman band. A phase diagram is proposed identifying insulating, intermediate, and conducting regimes. The intermediate region is attributed to a mixed phase.

Original languageEnglish
Article number071902
JournalApplied Physics Letters
Volume99
Issue number7
DOIs
StatePublished - Aug 15 2011

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