Abstract
The effects of native defect doping concentration on the phase transition properties of vanadium dioxide thin films are investigated. The onset temperature of the metal-insulator transition is found to depend on the free-carrier concentration and to correlate with an abrupt change in the temperature dependence of the vibrational energies of the V-O related Raman band. A phase diagram is proposed identifying insulating, intermediate, and conducting regimes. The intermediate region is attributed to a mixed phase.
Original language | English |
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Article number | 071902 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 7 |
DOIs | |
State | Published - Aug 15 2011 |