Effect of deposition conditions on the optical and chemical properties of SIO2 films

X. Xu; V. Kuryatkov; A. A. Bernussi; S. A. Nikishin

Effect of deposition conditions on the optical and chemical properties of SIO₂ films

X. Xu, V. Kuryatkov, A. A. Bernussi, S. A. Nikishin

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Thin SiO₂ films were deposited by plasma enhanced chemical vapor deposition (PECVD) in N₂O/SiH₄ mixture at different process conditions. The influences of chamber pressure, substrate temperature, and RF power on growth rate, refractive index, and etch rate of SiO₂ films were investigated. Our results indicate that the refractive index and the etch rate vary significantly with the SiO₂ thickness for values below 30 nm. This effect is attributed to the formation of non-stochiometric low dense SiO₂ films at the onset of deposition. A chemical reaction mechanism model for PECVD is proposed and discussed.

Original language	English
Title of host publication	TMS 2009 - 138th Annual Meeting and Exhibition - Supplemental Proceedings
Pages	653-659
Number of pages	7
State	Published - 2009
Event	TMS 2009 - 138th Annual Meeting and Exhibition - San Francisco, CA, United States Duration: Feb 15 2009 → Feb 19 2009

Publication series

Name	TMS Annual Meeting
Volume	3

Conference

Conference	TMS 2009 - 138th Annual Meeting and Exhibition
Country/Territory	United States
City	San Francisco, CA
Period	02/15/09 → 02/19/09

Keywords

Etch rate
PECVD
Refractive index
SiO

Cite this

@inproceedings{304e686bf078414481e549a4c4bee09f,

title = "Effect of deposition conditions on the optical and chemical properties of SIO2 films",

abstract = "Thin SiO2 films were deposited by plasma enhanced chemical vapor deposition (PECVD) in N2O/SiH4 mixture at different process conditions. The influences of chamber pressure, substrate temperature, and RF power on growth rate, refractive index, and etch rate of SiO2 films were investigated. Our results indicate that the refractive index and the etch rate vary significantly with the SiO2 thickness for values below 30 nm. This effect is attributed to the formation of non-stochiometric low dense SiO2 films at the onset of deposition. A chemical reaction mechanism model for PECVD is proposed and discussed.",

keywords = "Etch rate, PECVD, Refractive index, SiO",

author = "X. Xu and V. Kuryatkov and Bernussi, {A. A.} and Nikishin, {S. A.}",

year = "2009",

language = "English",

isbn = "9780873397407",

series = "TMS Annual Meeting",

pages = "653--659",

booktitle = "TMS 2009 - 138th Annual Meeting and Exhibition - Supplemental Proceedings",

note = "TMS 2009 - 138th Annual Meeting and Exhibition ; Conference date: 15-02-2009 Through 19-02-2009",

}

TY - GEN

T1 - Effect of deposition conditions on the optical and chemical properties of SIO2 films

AU - Xu, X.

AU - Kuryatkov, V.

AU - Bernussi, A. A.

AU - Nikishin, S. A.

PY - 2009

Y1 - 2009

N2 - Thin SiO2 films were deposited by plasma enhanced chemical vapor deposition (PECVD) in N2O/SiH4 mixture at different process conditions. The influences of chamber pressure, substrate temperature, and RF power on growth rate, refractive index, and etch rate of SiO2 films were investigated. Our results indicate that the refractive index and the etch rate vary significantly with the SiO2 thickness for values below 30 nm. This effect is attributed to the formation of non-stochiometric low dense SiO2 films at the onset of deposition. A chemical reaction mechanism model for PECVD is proposed and discussed.

AB - Thin SiO2 films were deposited by plasma enhanced chemical vapor deposition (PECVD) in N2O/SiH4 mixture at different process conditions. The influences of chamber pressure, substrate temperature, and RF power on growth rate, refractive index, and etch rate of SiO2 films were investigated. Our results indicate that the refractive index and the etch rate vary significantly with the SiO2 thickness for values below 30 nm. This effect is attributed to the formation of non-stochiometric low dense SiO2 films at the onset of deposition. A chemical reaction mechanism model for PECVD is proposed and discussed.

KW - Etch rate

KW - PECVD

KW - Refractive index

KW - SiO

UR - http://www.scopus.com/inward/record.url?scp=70349456672&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:70349456672

SN - 9780873397407

T3 - TMS Annual Meeting

SP - 653

EP - 659

BT - TMS 2009 - 138th Annual Meeting and Exhibition - Supplemental Proceedings

T2 - TMS 2009 - 138th Annual Meeting and Exhibition

Y2 - 15 February 2009 through 19 February 2009

ER -