Effect of deposition conditions on the optical and chemical properties of SIO2 films

X. Xu, V. Kuryatkov, A. A. Bernussi, S. A. Nikishin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin SiO2 films were deposited by plasma enhanced chemical vapor deposition (PECVD) in N2O/SiH4 mixture at different process conditions. The influences of chamber pressure, substrate temperature, and RF power on growth rate, refractive index, and etch rate of SiO2 films were investigated. Our results indicate that the refractive index and the etch rate vary significantly with the SiO2 thickness for values below 30 nm. This effect is attributed to the formation of non-stochiometric low dense SiO2 films at the onset of deposition. A chemical reaction mechanism model for PECVD is proposed and discussed.

Original languageEnglish
Title of host publicationTMS 2009 - 138th Annual Meeting and Exhibition - Supplemental Proceedings
Pages653-659
Number of pages7
StatePublished - 2009
EventTMS 2009 - 138th Annual Meeting and Exhibition - San Francisco, CA, United States
Duration: Feb 15 2009Feb 19 2009

Publication series

NameTMS Annual Meeting
Volume3

Conference

ConferenceTMS 2009 - 138th Annual Meeting and Exhibition
CountryUnited States
CitySan Francisco, CA
Period02/15/0902/19/09

Keywords

  • Etch rate
  • PECVD
  • Refractive index
  • SiO

Fingerprint Dive into the research topics of 'Effect of deposition conditions on the optical and chemical properties of SIO<sub>2</sub> films'. Together they form a unique fingerprint.

Cite this