TY - JOUR
T1 - Effect of deep level impact ionization on avalanche breakdown in semiconductor p-n junctions
AU - Kang, Samsoo
AU - Myles, Charles W.
PY - 2000/9
Y1 - 2000/9
N2 - Using a simple model, we have investigated the effect of deep level impact ionization on a avalanche breakdown in GaAs, InP, and Si p-n junctions. The ionization coefficients are obtained using Robbins' formalism [phys. stat. sol. (b) 97, 9 (1980)]. Results are presented for trends in the dependence of the breakdown voltage and electric field on the doping densities and on the deep level density and energy. Our results show that, for fixed doping densities, the breakdown voltage and field both decrease with increasing deep level density. Further, we find that their sensitivity to the deep level density is much stronger for levels deep within the bandgap than for those near a band edge, correlating with the decreased ionization threshold energy for shallower levels. We also find that the breakdown voltage and critical field in Si p-n junctions are stronger functions of the deep level density and energy than in GaAs and InP junctions.
AB - Using a simple model, we have investigated the effect of deep level impact ionization on a avalanche breakdown in GaAs, InP, and Si p-n junctions. The ionization coefficients are obtained using Robbins' formalism [phys. stat. sol. (b) 97, 9 (1980)]. Results are presented for trends in the dependence of the breakdown voltage and electric field on the doping densities and on the deep level density and energy. Our results show that, for fixed doping densities, the breakdown voltage and field both decrease with increasing deep level density. Further, we find that their sensitivity to the deep level density is much stronger for levels deep within the bandgap than for those near a band edge, correlating with the decreased ionization threshold energy for shallower levels. We also find that the breakdown voltage and critical field in Si p-n junctions are stronger functions of the deep level density and energy than in GaAs and InP junctions.
UR - http://www.scopus.com/inward/record.url?scp=0034272639&partnerID=8YFLogxK
U2 - 10.1002/1521-396X(200009)181:1<219::AID-PSSA219>3.0.CO;2-O
DO - 10.1002/1521-396X(200009)181:1<219::AID-PSSA219>3.0.CO;2-O
M3 - Article
AN - SCOPUS:0034272639
SN - 0031-8965
VL - 181
SP - 219
EP - 229
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 1
ER -