Effect of deep level impact ionization on avalanche breakdown in semiconductor p-n junctions

Samsoo Kang, Charles W. Myles

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Using a simple model, we have investigated the effect of deep level impact ionization on a avalanche breakdown in GaAs, InP, and Si p-n junctions. The ionization coefficients are obtained using Robbins' formalism [phys. stat. sol. (b) 97, 9 (1980)]. Results are presented for trends in the dependence of the breakdown voltage and electric field on the doping densities and on the deep level density and energy. Our results show that, for fixed doping densities, the breakdown voltage and field both decrease with increasing deep level density. Further, we find that their sensitivity to the deep level density is much stronger for levels deep within the bandgap than for those near a band edge, correlating with the decreased ionization threshold energy for shallower levels. We also find that the breakdown voltage and critical field in Si p-n junctions are stronger functions of the deep level density and energy than in GaAs and InP junctions.

Original languageEnglish
Pages (from-to)219-229
Number of pages11
JournalPhysica Status Solidi (A) Applied Research
Volume181
Issue number1
DOIs
StatePublished - Sep 2000

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