Effect of alloy disorder on the deep levels produced by the anion vacancy in GaAs1-xPx

Sui An Tang; Charles W. Myles; William C. Ford

doi:10.1103/PhysRevB.40.11947

Effect of alloy disorder on the deep levels produced by the anion vacancy in GaAs1-xPx

Sui An Tang, Charles W. Myles, William C. Ford

Physics

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2 Scopus citations

Abstract

The inhomogeneous alloy broadening of the deep electronic levels produced by the ideal anion (As or P) vacancy in GaAs1-xPx is calculated using an extension of previous work to the case of vacancy-associated levels broadened by second-neighbor disorder. Results are presented for the composition dependences of the spectra produced by the s-like and p-like vacancy-associated levels.

Original language	English
Pages (from-to)	11947-11950
Number of pages	4
Journal	Physical Review B
Volume	40
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevB.40.11947
State	Published - 1989

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title = "Effect of alloy disorder on the deep levels produced by the anion vacancy in GaAs1-xPx",

abstract = "The inhomogeneous alloy broadening of the deep electronic levels produced by the ideal anion (As or P) vacancy in GaAs1-xPx is calculated using an extension of previous work to the case of vacancy-associated levels broadened by second-neighbor disorder. Results are presented for the composition dependences of the spectra produced by the s-like and p-like vacancy-associated levels.",

author = "Tang, {Sui An} and Myles, {Charles W.} and Ford, {William C.}",

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AU - Tang, Sui An

AU - Myles, Charles W.

AU - Ford, William C.

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N2 - The inhomogeneous alloy broadening of the deep electronic levels produced by the ideal anion (As or P) vacancy in GaAs1-xPx is calculated using an extension of previous work to the case of vacancy-associated levels broadened by second-neighbor disorder. Results are presented for the composition dependences of the spectra produced by the s-like and p-like vacancy-associated levels.

AB - The inhomogeneous alloy broadening of the deep electronic levels produced by the ideal anion (As or P) vacancy in GaAs1-xPx is calculated using an extension of previous work to the case of vacancy-associated levels broadened by second-neighbor disorder. Results are presented for the composition dependences of the spectra produced by the s-like and p-like vacancy-associated levels.

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U2 - 10.1103/PhysRevB.40.11947

DO - 10.1103/PhysRevB.40.11947

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SP - 11947

EP - 11950

JO - Physical Review B

JF - Physical Review B

IS - 17

ER -

Effect of alloy disorder on the deep levels produced by the anion vacancy in GaAs1-xPx

Abstract

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