Effect of alloy disorder on the deep levels produced by the anion vacancy in GaAs1-xPx

Sui An Tang, Charles W. Myles, William C. Ford

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The inhomogeneous alloy broadening of the deep electronic levels produced by the ideal anion (As or P) vacancy in GaAs1-xPx is calculated using an extension of previous work to the case of vacancy-associated levels broadened by second-neighbor disorder. Results are presented for the composition dependences of the spectra produced by the s-like and p-like vacancy-associated levels.

Original languageEnglish
Pages (from-to)11947-11950
Number of pages4
JournalPhysical Review B
Volume40
Issue number17
DOIs
StatePublished - 1989

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