Dynamics of exciton transfer between the bound and the continuum states in GaAs-AlxGa1-xAs multiple quantum wells

H. X. Jiang, E. X. Ping, P. Zhou, J. Y. Lin

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

Experimentally observed two-exponential decay of excitonic transitions in GaAs-AlxGa1-xAs multiple quantum wells has been successfully interpreted in terms of the exciton transfer between the continuum (free carriers) and the bound states. The calculation results obtained from this exciton-transfer model are in excellent agreement with experimental observations. The rates of the exciton transfer and the free-carrier recombination have been obtained. We have demonstrated that the emission-energy dependence of the decay time constant of the slower decay component is caused by the variation in exciton binding energy induced by interface roughness in the quantum wells.

Original languageEnglish
Pages (from-to)12949-12952
Number of pages4
JournalPhysical Review B
Volume41
Issue number18
DOIs
StatePublished - 1990

Fingerprint Dive into the research topics of 'Dynamics of exciton transfer between the bound and the continuum states in GaAs-AlxGa1-xAs multiple quantum wells'. Together they form a unique fingerprint.

Cite this