Dynamics of exciton localization in a CdSe0.5S0.5 mixed crystal

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Abstract

Dynamic processes of exciton localization in a CdSe0.5S0.5 II-VI mixed semiconductor have been studied by time-resolved photoluminescence. We found experimentally that the exciton-transfer rate depicts a power-law behavior near the mobility edge Em. Our results indicate that the exciton-localization radius behaves according to the law a(E)-Em-E - s (EEm), s being nearly equal to 0.7, which is analogous to the behavior of the localized carriers in the Mott-Anderson model. The spectral shift with delay time has been shown to be a natural consequence of the observed exciton-lifetime behavior.

Original languageEnglish
Pages (from-to)7284-7287
Number of pages4
JournalPhysical Review B
Volume42
Issue number11
DOIs
StatePublished - 1990

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