Abstract
Dynamic processes of exciton localization in a CdSe0.5S0.5 II-VI mixed semiconductor have been studied by time-resolved photoluminescence. We found experimentally that the exciton-transfer rate depicts a power-law behavior near the mobility edge Em. Our results indicate that the exciton-localization radius behaves according to the law a(E)-Em-E - s (EEm), s being nearly equal to 0.7, which is analogous to the behavior of the localized carriers in the Mott-Anderson model. The spectral shift with delay time has been shown to be a natural consequence of the observed exciton-lifetime behavior.
| Original language | English |
|---|---|
| Pages (from-to) | 7284-7287 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 42 |
| Issue number | 11 |
| DOIs | |
| State | Published - 1990 |