Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy

M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Botchkarev, H. Morkoç

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34 Scopus citations

Abstract

Time-resolved photoluminescence spectroscopy has been used to probe the dynamics of optical transitions in GaN epitaxial layers grown by molecular beam epitaxy. In particular, systematic measurements on a band-edge transition at about 3.42 eV have been carried out. Recombination lifetimes of this transition have been measured at different emission energies. Our results clearly show that the time-resolved photoluminescence can provide immense value in the understanding of the dynamic processes of optical transitions in GaN.

Original languageEnglish
Pages (from-to)2798
Number of pages1
JournalApplied Physics Letters
Volume66
DOIs
StatePublished - 1995

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