Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy

M. Smith; G. D. Chen; J. Y. Lin; H. X. Jiang; A. Salvador; B. N. Sverdlov; A. Botchkarev; H. Morkoç

doi:10.1063/1.113768

Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy

M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Botchkarev, H. Morkoç

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Time-resolved photoluminescence spectroscopy has been used to probe the dynamics of optical transitions in GaN epitaxial layers grown by molecular beam epitaxy. In particular, systematic measurements on a band-edge transition at about 3.42 eV have been carried out. Recombination lifetimes of this transition have been measured at different emission energies. Our results clearly show that the time-resolved photoluminescence can provide immense value in the understanding of the dynamic processes of optical transitions in GaN.

Original language	English
Pages (from-to)	2798
Number of pages	1
Journal	Applied Physics Letters
Volume	66
DOIs	https://doi.org/10.1063/1.113768
State	Published - 1995

Access to Document

10.1063/1.113768

Cite this

@article{f6daf0e6b42e4de0ae20438e2c3347af,

title = "Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy",

abstract = "Time-resolved photoluminescence spectroscopy has been used to probe the dynamics of optical transitions in GaN epitaxial layers grown by molecular beam epitaxy. In particular, systematic measurements on a band-edge transition at about 3.42 eV have been carried out. Recombination lifetimes of this transition have been measured at different emission energies. Our results clearly show that the time-resolved photoluminescence can provide immense value in the understanding of the dynamic processes of optical transitions in GaN.",

author = "M. Smith and Chen, {G. D.} and Lin, {J. Y.} and Jiang, {H. X.} and A. Salvador and Sverdlov, {B. N.} and A. Botchkarev and H. Morko{\c c}",

year = "1995",

doi = "10.1063/1.113768",

language = "English",

volume = "66",

pages = "2798",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

}

TY - JOUR

T1 - Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy

AU - Smith, M.

AU - Chen, G. D.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Salvador, A.

AU - Sverdlov, B. N.

AU - Botchkarev, A.

AU - Morkoç, H.

PY - 1995

Y1 - 1995

N2 - Time-resolved photoluminescence spectroscopy has been used to probe the dynamics of optical transitions in GaN epitaxial layers grown by molecular beam epitaxy. In particular, systematic measurements on a band-edge transition at about 3.42 eV have been carried out. Recombination lifetimes of this transition have been measured at different emission energies. Our results clearly show that the time-resolved photoluminescence can provide immense value in the understanding of the dynamic processes of optical transitions in GaN.

AB - Time-resolved photoluminescence spectroscopy has been used to probe the dynamics of optical transitions in GaN epitaxial layers grown by molecular beam epitaxy. In particular, systematic measurements on a band-edge transition at about 3.42 eV have been carried out. Recombination lifetimes of this transition have been measured at different emission energies. Our results clearly show that the time-resolved photoluminescence can provide immense value in the understanding of the dynamic processes of optical transitions in GaN.

UR - http://www.scopus.com/inward/record.url?scp=36449006665&partnerID=8YFLogxK

U2 - 10.1063/1.113768

DO - 10.1063/1.113768

M3 - Article

AN - SCOPUS:36449006665

SN - 0003-6951

VL - 66

SP - 2798

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this