DX centers in Al0.34Ga0.66As amorphous thin films

J. Y. Lin; A. Dissanayake; H. X. Jiang

doi:10.1016/0038-1098(93)90414-I

DX centers in Al_0.34Ga_0.66As amorphous thin films

J. Y. Lin, A. Dissanayake, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Al_0.34Ga_0.66As amorphous thin films doped with Si have been prepared for studying common features of DX type of defects in crystalline and amorphous semiconductors. We have observed in these materials the persistent photoconductivity (PPC) effect at T < 250 K. The four energies which characterize the DX levels in these materials have been determined. A large Stokes shift with a value which is comparable with that of DX centers in crystalline Al_xGa_1-xAs has been observed. Our results suggest that the existence of the DX centers as well as of PPC is not simply a consequence of the band structure. Our results also suggest that there may exist a common description for DX type defects in crystalline and amorphous semiconductors.

Original language	English
Pages (from-to)	787-790
Number of pages	4
Journal	Solid State Communications
Volume	87
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(93)90414-I
State	Published - Sep 1993

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title = "DX centers in Al0.34Ga0.66As amorphous thin films",

abstract = "Al0.34Ga0.66As amorphous thin films doped with Si have been prepared for studying common features of DX type of defects in crystalline and amorphous semiconductors. We have observed in these materials the persistent photoconductivity (PPC) effect at T < 250 K. The four energies which characterize the DX levels in these materials have been determined. A large Stokes shift with a value which is comparable with that of DX centers in crystalline AlxGa1-xAs has been observed. Our results suggest that the existence of the DX centers as well as of PPC is not simply a consequence of the band structure. Our results also suggest that there may exist a common description for DX type defects in crystalline and amorphous semiconductors.",

author = "Lin, {J. Y.} and A. Dissanayake and Jiang, {H. X.}",

note = "Funding Information: Acknowledgement - This work is supported by the NSF grant DMR-9118818.",

year = "1993",

month = sep,

doi = "10.1016/0038-1098(93)90414-I",

language = "English",

volume = "87",

pages = "787--790",

journal = "Solid State Communications",

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T1 - DX centers in Al0.34Ga0.66As amorphous thin films

AU - Lin, J. Y.

AU - Dissanayake, A.

AU - Jiang, H. X.

N1 - Funding Information: Acknowledgement - This work is supported by the NSF grant DMR-9118818.

PY - 1993/9

Y1 - 1993/9

N2 - Al0.34Ga0.66As amorphous thin films doped with Si have been prepared for studying common features of DX type of defects in crystalline and amorphous semiconductors. We have observed in these materials the persistent photoconductivity (PPC) effect at T < 250 K. The four energies which characterize the DX levels in these materials have been determined. A large Stokes shift with a value which is comparable with that of DX centers in crystalline AlxGa1-xAs has been observed. Our results suggest that the existence of the DX centers as well as of PPC is not simply a consequence of the band structure. Our results also suggest that there may exist a common description for DX type defects in crystalline and amorphous semiconductors.

AB - Al0.34Ga0.66As amorphous thin films doped with Si have been prepared for studying common features of DX type of defects in crystalline and amorphous semiconductors. We have observed in these materials the persistent photoconductivity (PPC) effect at T < 250 K. The four energies which characterize the DX levels in these materials have been determined. A large Stokes shift with a value which is comparable with that of DX centers in crystalline AlxGa1-xAs has been observed. Our results suggest that the existence of the DX centers as well as of PPC is not simply a consequence of the band structure. Our results also suggest that there may exist a common description for DX type defects in crystalline and amorphous semiconductors.

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U2 - 10.1016/0038-1098(93)90414-I

DO - 10.1016/0038-1098(93)90414-I

M3 - Article

AN - SCOPUS:0027656699

SN - 0038-1098

VL - 87

SP - 787

EP - 790

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

DX centers in Al_0.34Ga_0.66As amorphous thin films

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