Doping-Less SiC p-i-n Diode: Design and Investigation

We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of the work-function difference between silicon carbide and metal electrodes. Utilizing the 2-D TCAD simulation, we represent the performance of the proposed doping-less silicon carbide p-i-n diode is analogous to the silicon carbide Schottky diode in terms of forward and reverse characteristics as well as temperature dependency. As opposed to the conventional (doped) silicon carbide p-i-n diode, the doping-less silicon carbide p-i-n diode holds a lower ON-state voltage drop and higher reverse saturation current. Although the doping-less silicon carbide p-i-n diode has the merits of the silicon carbide Schottky diode, but it has leverage over the corresponding counterparts by eliminating the doping and the high thermal budget fabrication processes.