Doping-Less SiC p-i-n Diode: Design and Investigation

Sara Hahmady, Stephen Bayne

Research output: Contribution to journalArticlepeer-review

Abstract

We introduce a novel high-voltage SiC p-i-n diode considering a charge plasma approach. This technique facilitates the formation of the anode and the cathode regions within the silicon carbide without requiring any impurity doping by taking advantage of the work-function difference between silicon carbide and metal electrodes. Utilizing the 2-D TCAD simulation, we represent the performance of the proposed doping-less silicon carbide p-i-n diode is analogous to the silicon carbide Schottky diode in terms of forward and reverse characteristics as well as temperature dependency. As opposed to the conventional (doped) silicon carbide p-i-n diode, the doping-less silicon carbide p-i-n diode holds a lower ON-state voltage drop and higher reverse saturation current. Although the doping-less silicon carbide p-i-n diode has the merits of the silicon carbide Schottky diode, but it has leverage over the corresponding counterparts by eliminating the doping and the high thermal budget fabrication processes.

Original languageEnglish
Article number9466136
Pages (from-to)99866-99875
Number of pages10
JournalIEEE Access
Volume9
DOIs
StatePublished - 2021

Keywords

  • Charge plasma
  • doping-less
  • p-i-n diode
  • temperature dependency

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