Doping and processing epitaxial Ge_xSi_1-x films on Si(100) by ion implantation for Si-based heterojunction devices applications

Engineering & Materials Science

• Ion implantation 96%
• Heterojunctions 93%
• Annealing 71%
• Ions 32%
• Chemical activation 21%
• Strain relaxation 20%
• Temperature 19%
• Relaxation processes 17%
• Epitaxial growth 16%
• Defects 16%
• Fabrication 8%
• Substrates 8%

Physics & Astronomy

• heterojunction devices 100%
• ion implantation 65%
• implantation 63%
• annealing 34%
• damage 20%
• solid phases 13%
• ions 10%
• dosage 9%
• room temperature 7%
• defects 7%
• epitaxy 7%
• fabrication 4%
• temperature 4%

Chemistry

• Strain 50%
• Rapid Thermal Annealing 35%
• Liquid Film 34%
• Implanted Ion 33%
• Doping Material 31%
• Solid Phase Epitaxy 23%
• Application 22%
• Dose 18%
• Ambient Reaction Temperature 13%
• Modification 6%
• Ion 4%