Dopant activation and strain relaxation in P-implanted metastable pseudomorphic Ge 0.12 Si 0.88 grown on Si(100)

D. Y.C. Lie, N. D. Theodore, J. H. Song

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Fingerprint

Dive into the research topics of 'Dopant activation and strain relaxation in P-implanted metastable pseudomorphic Ge 0.12 Si 0.88 grown on Si(100)'. Together they form a unique fingerprint.

Engineering & Materials Science

Chemistry

Physics & Astronomy