Dopant activation and epitaxial regrowth in P-implanted pseudomorphic Ge0.12Si0.88 layers on Si(100)

D. Y.C. Lie, N. D. Theodore, F. Eisen, M. A. Nicolet, K. L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

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