TY - JOUR
T1 - Disorder and persistent photoconductivity iSe semiconductor alloys
AU - Smith, M.
AU - Lin, J.
AU - Jiang, H.
PY - 1996
Y1 - 1996
N2 - A theoretical formula based on carrier scattering in systems with a certain degree of disorder has been derived, which describes well the buildup transients of persistent photoconductivity and carrier transport due to the conduction-band tail states in semiconductor alloys. Important parameters, including the distribution of tail states caused purely by alloy disorder, can be obtained by comparing our theory with experimental data. The formula derived here has general validity for describing the conductivity due to the tail states in other systems with either structure (amorphous), location (impurity), or alloy disorder.
AB - A theoretical formula based on carrier scattering in systems with a certain degree of disorder has been derived, which describes well the buildup transients of persistent photoconductivity and carrier transport due to the conduction-band tail states in semiconductor alloys. Important parameters, including the distribution of tail states caused purely by alloy disorder, can be obtained by comparing our theory with experimental data. The formula derived here has general validity for describing the conductivity due to the tail states in other systems with either structure (amorphous), location (impurity), or alloy disorder.
UR - http://www.scopus.com/inward/record.url?scp=2842518027&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.54.1471
DO - 10.1103/PhysRevB.54.1471
M3 - Article
AN - SCOPUS:2842518027
SN - 1098-0121
VL - 54
SP - 1471
EP - 1473
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 3
ER -