Disorder and persistent photoconductivity iSe semiconductor alloys

M. Smith, J. Lin, H. Jiang

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A theoretical formula based on carrier scattering in systems with a certain degree of disorder has been derived, which describes well the buildup transients of persistent photoconductivity and carrier transport due to the conduction-band tail states in semiconductor alloys. Important parameters, including the distribution of tail states caused purely by alloy disorder, can be obtained by comparing our theory with experimental data. The formula derived here has general validity for describing the conductivity due to the tail states in other systems with either structure (amorphous), location (impurity), or alloy disorder.

Original languageEnglish
Pages (from-to)1471-1473
Number of pages3
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number3
DOIs
StatePublished - 1996

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