Dislocation defect based model analysis for the pre-breakdown reverse characteristics of 4H-SiC p+n diodes

L. Zheng, R. P. Joshi, C. Fazi

Research output: Contribution to journalArticle

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Abstract

The pre-breakdown reverse characteristics of 4H-silicon carbide diodes were studied to determine the effects of the presence of dislocations and traps in the material. The mathematical model developed showed that the SiC diode reverse characteristics are primarily controlled by the impact ionization process for the materials containing dislocation defects as well as for the defect-free samples. Results show significant increases in the device current in the presence of dislocations. These results would indicate that the materials have softer threshold and lower hold-off capabilities.

Original languageEnglish
Pages (from-to)7935-7938
Number of pages4
JournalJournal of Applied Physics
Volume85
Issue number11
DOIs
StatePublished - Jun 1999

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