Abstract
Electron-optical phonon scattering rates in ultrathin GaAs-AlAs multiple quantum well structures have been directly measured by using time-resolved Raman spectroscopy on a subpicosecond timescale. We have found that when the GaAs well width increases from 20 to 60 Å, electron-AlAs-like-optical phonon scattering rate decreases by a factor of about 3. The experimental results are explained with theoretical calculations of electron-optical phonon interactions recently carried out by K. Huang and B. Zhu [Phys. Rev. B 38, 13377 (1988)].
| Original language | English |
|---|---|
| Pages (from-to) | 2075-2077 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 62 |
| Issue number | 17 |
| DOIs | |
| State | Published - 1993 |