Direct hydrogen gas generation by using InGaN epilayers as working electrodes

J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.3006332

Direct hydrogen gas generation by using InGaN epilayers as working electrodes

J. Li, J. Y. Lin, H. X. Jiang

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Abstract

We report on the growth and exploitation of InGaN epilayers as a photoelectrochemical cell (PEC) material for direct generation of hydrogen by splitting water using photoelectrochemical hydrolysis. Under white light illumination, a drastic dependence of the photocurrent density on the In content was observed. Direct hydrogen gas generation by splitting water was accomplished using an n -type Inx Ga1-x N epilayer with a relatively high In content (x∼0.4) as a working electrode. This demonstration of hydrogen generation by water splitting accomplished using InGaN based PEC is highly encouraging.

Original language	English
Article number	162107
Journal	Applied Physics Letters
Volume	93
Issue number	16
DOIs	https://doi.org/10.1063/1.3006332
State	Published - 2008

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10.1063/1.3006332

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@article{573d36247b324d648cb8fc29f022da10,

title = "Direct hydrogen gas generation by using InGaN epilayers as working electrodes",

abstract = "We report on the growth and exploitation of InGaN epilayers as a photoelectrochemical cell (PEC) material for direct generation of hydrogen by splitting water using photoelectrochemical hydrolysis. Under white light illumination, a drastic dependence of the photocurrent density on the In content was observed. Direct hydrogen gas generation by splitting water was accomplished using an n -type Inx Ga1-x N epilayer with a relatively high In content (x∼0.4) as a working electrode. This demonstration of hydrogen generation by water splitting accomplished using InGaN based PEC is highly encouraging.",

author = "J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: The InGaN epigrowth work is supported by NSF and the PEC characterization work is supported by AFOSR. J.Y.L. and H.X.J. gratefully acknowledge the support of the Linda Whitacre and Edward Whitacre Endowed Chair positions through the AT&T Foundation and insightful discussions with Dr. Gernot S. Pomrenke of AFOSR. ",

year = "2008",

doi = "10.1063/1.3006332",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Direct hydrogen gas generation by using InGaN epilayers as working electrodes

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: The InGaN epigrowth work is supported by NSF and the PEC characterization work is supported by AFOSR. J.Y.L. and H.X.J. gratefully acknowledge the support of the Linda Whitacre and Edward Whitacre Endowed Chair positions through the AT&T Foundation and insightful discussions with Dr. Gernot S. Pomrenke of AFOSR.

PY - 2008

Y1 - 2008

N2 - We report on the growth and exploitation of InGaN epilayers as a photoelectrochemical cell (PEC) material for direct generation of hydrogen by splitting water using photoelectrochemical hydrolysis. Under white light illumination, a drastic dependence of the photocurrent density on the In content was observed. Direct hydrogen gas generation by splitting water was accomplished using an n -type Inx Ga1-x N epilayer with a relatively high In content (x∼0.4) as a working electrode. This demonstration of hydrogen generation by water splitting accomplished using InGaN based PEC is highly encouraging.

AB - We report on the growth and exploitation of InGaN epilayers as a photoelectrochemical cell (PEC) material for direct generation of hydrogen by splitting water using photoelectrochemical hydrolysis. Under white light illumination, a drastic dependence of the photocurrent density on the In content was observed. Direct hydrogen gas generation by splitting water was accomplished using an n -type Inx Ga1-x N epilayer with a relatively high In content (x∼0.4) as a working electrode. This demonstration of hydrogen generation by water splitting accomplished using InGaN based PEC is highly encouraging.

UR - http://www.scopus.com/inward/record.url?scp=54949143962&partnerID=8YFLogxK

U2 - 10.1063/1.3006332

DO - 10.1063/1.3006332

M3 - Article

AN - SCOPUS:54949143962

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 162107

ER -

Direct hydrogen gas generation by using InGaN epilayers as working electrodes

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