Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

J. Li, S. Majety, R. Dahal, W. P. Zhao, J. Y. Lin, H. X. Jiang

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Hexagonal boron nitride (hBN) epilayers have been synthesized by metal organic chemical vapor deposition and their dielectric strength, optical absorption, and potential as a deep ultraviolet (DUV) detector material have been studied. Based on the graphene optical absorption concept, the estimated band-edge absorption coefficient of hBN is about 7 × 10 5/cm, which is more than 3 times higher than the value for wurtzite AlN (∼2 × 10 5 /cm). The dielectric strength of hBN epilayers exceeds that of AlN and is greater than 4.4 MV/cm based on the measured result for an hBN epilayer released from the host sapphire substrate. The hBN epilayer based DUV detectors exhibit a sharp cut-off wavelength around 230 nm, which coincides with the band-edge photoluminescence emission peak and virtually no responses in the long wavelengths. Based on the present study, we have identified several advantageous features of hBN DUV photodetectors: (1) low long wavelength response or high DUV to visible rejection ratio; (2) requiring very thin active layers due to high optical absorption; (3) high dielectric strength and chemical inertness and resistance to oxidation and therefore suitable for applications in extreme conditions; (4) high prospects of achieving flexible devices; and (5) possible integration with graphene optoelectronics due to their similar structures and lattice constants.

Original languageEnglish
Article number171112
JournalApplied Physics Letters
Issue number17
StatePublished - Oct 22 2012


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