Dielectric function of AlN grown on Si (111) by MBE

Stefan Zollner, Atul Konkar, R. B. Gregory, S. R. Wilson, S. A. Nikishin, H. Temkin

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

We measured the ellipsometric response from 0.7-5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5-10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. The films were also characterized using atomic force microscopy and x-ray diffraction to study the growth morphology. We find that AlN can be grown on Si (111) without buffer layers resulting in truely two-dimensional growth, low surface roughness, and relatively narrow x-ray peak widths.

Original languageEnglish
Pages (from-to)231-236
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume572
DOIs
StatePublished - 1999
EventProceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA
Duration: Apr 5 1999Apr 8 1999

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