DI/DT evaluation of a SI N-Type GTO designed for pulsed power applications

Tyler Flack, Cameron Hettler, Stephen Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Pulsed power systems which utilize solid state switching devices, rather than spark/gas-Type devices, could potentially exhibit increased energy density, repetition rate, operational lifetime, and ruggedness. However, further evaluation of advanced solid state devices, such as thyristor type devices, is required to better understand their operation for pulsed power applications. This paper details experimental evaluation of the dI/dt capabilities of a silicon (Si) n-Type, asymmetric-blocking gate turn-off thyristor (GTO) manufactured by Silicon Power. The device under test (DUT) is rated to block up to 4 kV with rated dI/dt of 30 kA/μs. The DUT was designed as a solid state replacement for spark/gas-Type switching devices in pulsed power applications. A low inductance test circuit was designed and built to evaluate the dI/dt capabilities of the DUT. Specific care was taken to minimize the parasitic inductance and thereby exploit the achievable dI/dt ratings by the test devices. An external fiber-driven gate driver is used to trigger the device with gate current (IG) of approximately 1.3 A and rate of current change (dIG/dt) of approximately 25.5 A/μs. Experimental dI/dt values greatly exceeded rated values; specifically dI/dt values of approximately 77 kA/μs were readily achieved at 4 kV. No device degradation was observed over the course of evaluation.

Original languageEnglish
Title of host publication2015 IEEE Pulsed Power Conference, PPC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984039
DOIs
StatePublished - Oct 12 2015
EventIEEE Pulsed Power Conference, PPC 2015 - Austin, United States
Duration: May 31 2015Jun 4 2015

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference
Volume2015-October

Conference

ConferenceIEEE Pulsed Power Conference, PPC 2015
CountryUnited States
CityAustin
Period05/31/1506/4/15

Keywords

  • Gate turn-off thyristor (GTO)
  • Pulsed power
  • Thyristor

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    Flack, T., Hettler, C., & Bayne, S. (2015). DI/DT evaluation of a SI N-Type GTO designed for pulsed power applications. In 2015 IEEE Pulsed Power Conference, PPC 2015 [7296985] (Digest of Technical Papers-IEEE International Pulsed Power Conference; Vol. 2015-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PPC.2015.7296985