This work presents the noise parameters of IBM's 0.5μm/50GHz Ft SiGe BiCMOS(5HP), 0.25μm/47GHz Ft SiGe BiCMOS (6HP) and 0.18μm/120GHz Ft SiGe BiCMOS(7HP) HBT transistors related to low noise amplifier design. A common optimum bias current density for minimum noise figure is found for all three technologies. For each technology, device size selection is suggested for gain, noise, and return loss tradeoffs. Also, emitter degeneration is shown to be helpful in improving both input return loss and noise matching. The simulated results indicate that 7HP, as expected, provides the lowest noise figure for LNA designs.
|Number of pages||4|
|State||Published - 2001|
|Event||9th International Symposium on Integrated Circuits, Devices and Systems, ISIC 2001: Proceedings - Low Power and Low Voltage Integrated Systems - Singapore, Singapore|
Duration: Sep 3 2001 → Sep 5 2001
|Conference||9th International Symposium on Integrated Circuits, Devices and Systems, ISIC 2001: Proceedings - Low Power and Low Voltage Integrated Systems|
|Period||09/3/01 → 09/5/01|