Development of secondary breakdown circuit for DV/DT analysis of SIC devices

J. A. Schrock, W. B. Ray, A. V. Bilbao, M. D. Kelley, E. A. Hirsch, S. L. Holt, S. B. Bayne

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Silicon carbide (4H-SiC) is a leading option for increasing the power density of pulsed power and power electronic systems1, 2. SiC devices used in high voltage switching applications experience high dV/dt due to fast switching transients. Under high dV/dt conditions the devices can exhibit spurious turn-ON. For SiC devices to achieve widespread acceptance the dV/dt limit must be established. To measure the dV/dt limit, a circuit comprised of four silicon avalanche BJTs operating in secondary breakdown was constructed. This circuit is capable of generating dV/dts well in excess of what SiC unipolar and bipolar devices might be exposed to in typical applications. Two SiC diodes in an 'OR' configuration are used to perform a comprehensive dV/dt analysis as a function of dc bias. Using this experimental setup dV/dts up to 200 V/ns were applied to SiC MOSFETs, and the induced gate to source voltage was measured. Preliminary dV/dt results achieved with the secondary breakdown circuit are shown for a range of dc biases.

Original languageEnglish
Title of host publication2015 IEEE Pulsed Power Conference, PPC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984039
DOIs
StatePublished - Oct 12 2015
EventIEEE Pulsed Power Conference, PPC 2015 - Austin, United States
Duration: May 31 2015Jun 4 2015

Publication series

NameDigest of Technical Papers-IEEE International Pulsed Power Conference
Volume2015-October

Conference

ConferenceIEEE Pulsed Power Conference, PPC 2015
CountryUnited States
CityAustin
Period05/31/1506/4/15

Keywords

  • DVD
  • Electric breakdown
  • Logic gates
  • MOSFET
  • Power electronics
  • Silicon carbide
  • Voltage measurement

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