@inproceedings{02ac834117c34681a188950f63074d8c,
title = "Development of secondary breakdown circuit for DV/DT analysis of SIC devices",
abstract = "Silicon carbide (4H-SiC) is a leading option for increasing the power density of pulsed power and power electronic systems1, 2. SiC devices used in high voltage switching applications experience high dV/dt due to fast switching transients. Under high dV/dt conditions the devices can exhibit spurious turn-ON. For SiC devices to achieve widespread acceptance the dV/dt limit must be established. To measure the dV/dt limit, a circuit comprised of four silicon avalanche BJTs operating in secondary breakdown was constructed. This circuit is capable of generating dV/dts well in excess of what SiC unipolar and bipolar devices might be exposed to in typical applications. Two SiC diodes in an 'OR' configuration are used to perform a comprehensive dV/dt analysis as a function of dc bias. Using this experimental setup dV/dts up to 200 V/ns were applied to SiC MOSFETs, and the induced gate to source voltage was measured. Preliminary dV/dt results achieved with the secondary breakdown circuit are shown for a range of dc biases.",
keywords = "DVD, Electric breakdown, Logic gates, MOSFET, Power electronics, Silicon carbide, Voltage measurement",
author = "Schrock, {J. A.} and Ray, {W. B.} and Bilbao, {A. V.} and Kelley, {M. D.} and Hirsch, {E. A.} and Holt, {S. L.} and Bayne, {S. B.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; null ; Conference date: 31-05-2015 Through 04-06-2015",
year = "2015",
month = oct,
day = "12",
doi = "10.1109/PPC.2015.7296921",
language = "English",
series = "Digest of Technical Papers-IEEE International Pulsed Power Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE Pulsed Power Conference, PPC 2015",
}