Design trade-offs for single-ended vs. differential class-E SiGe bipolar power amplifiers with through-wafer-vias at 2.4GHz

Ruili Wu, Yan Li, Jerry Lopez, Donald Y.C. Lie

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

In this paper, we examine the design trade-offs of several Watt-level 2-stage single-ended and differential Class-E SiGe power amplifiers (PAs) at 2.4GHz. The circuits are designed in a 0.35μm IBM 5PAe SiGe BiCMOS technology with through-wafer-via (TWV) technology to minimize the detrimental parasitic ground inductance. SPICE simulations show that a 2-stage single-ended cascode PA can achieve high power gain of 30 dB with output power Psat/P 1dB =29.5/27dBm, peak power-added efficiency (PAE) of 51%, with -30dBc 2nd order harmonics and -44dBc 3rd order harmonics for CW input. Using a low-loss output balun, a differential PA can deliver higher output power than its single-ended counterpart; however, our proposed TWV-aided single-ended PA exhibits much better PAE with a smaller die area than its differential PA counterpart. The advantage of the differential PA will diminish quickly when the loss of the required output balun reaches above 1dB.

Original languageEnglish
Title of host publication54th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2011
DOIs
StatePublished - 2011
Event54th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2011 - Seoul, Korea, Republic of
Duration: Aug 7 2011Aug 10 2011

Publication series

NameMidwest Symposium on Circuits and Systems
ISSN (Print)1548-3746

Conference

Conference54th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2011
CountryKorea, Republic of
CitySeoul
Period08/7/1108/10/11

Keywords

  • CMOS PA
  • SiGe power amplifier (PA)
  • differential PA
  • power-added efficiency (PAE)
  • through-wafer-via (TWV)

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