Design of highly-efficient wideband RF polar transmitters using the envelope-tracking technique

Donald Y.C. Lie, Jerry Lopez, Yan Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper discusses the design issues of highly efficient and monolithic wideband RF polar transmitters, especially the ones that use the Envelope-Tracking (ET) technique. Besides reviewing the state-of-the-art polar transmitters in the literature, three focus topics will be discussed: (1) the system-on-a-chip (SoC) design considerations of the monolithic polar transmitter using ET; and (2) the design of highly-efficient envelope amplifier capable of achieving the high efficiency, current, bandwidth, accuracy and noise specifications required for wideband signals; and (3) the design of high-efficiency monolithic Si-based power amplifiers (PAs) suitable for ET-based RF polar transmitters.

Original languageEnglish
Title of host publication2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages57-64
Number of pages8
DOIs
StatePublished - 2008
Event2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Monterey, CA, United States
Duration: Oct 13 2008Oct 15 2008

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Conference

Conference2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
CountryUnited States
CityMonterey, CA
Period10/13/0810/15/08

Keywords

  • Envelope-elimination-and-restoration (EER)
  • Envelope-tracking (ET)
  • High-efficiency DC-DC converter
  • Monolithic RF SiGe Power amplifier (PA)
  • Polar transmitters
  • Power-added efficiency (PAE)
  • Switch-mode PA
  • System-on-a-chip (SoC)
  • Wideband transmitter

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  • Cite this

    Lie, D. Y. C., Lopez, J., & Li, Y. (2008). Design of highly-efficient wideband RF polar transmitters using the envelope-tracking technique. In 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 57-64). [4662712] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BIPOL.2008.4662712