TY - GEN
T1 - Design of highly-efficient wideband RF polar transmitters using the envelope-tracking technique
AU - Lie, Donald Y.C.
AU - Lopez, Jerry
AU - Li, Yan
PY - 2008
Y1 - 2008
N2 - This paper discusses the design issues of highly efficient and monolithic wideband RF polar transmitters, especially the ones that use the Envelope-Tracking (ET) technique. Besides reviewing the state-of-the-art polar transmitters in the literature, three focus topics will be discussed: (1) the system-on-a-chip (SoC) design considerations of the monolithic polar transmitter using ET; and (2) the design of highly-efficient envelope amplifier capable of achieving the high efficiency, current, bandwidth, accuracy and noise specifications required for wideband signals; and (3) the design of high-efficiency monolithic Si-based power amplifiers (PAs) suitable for ET-based RF polar transmitters.
AB - This paper discusses the design issues of highly efficient and monolithic wideband RF polar transmitters, especially the ones that use the Envelope-Tracking (ET) technique. Besides reviewing the state-of-the-art polar transmitters in the literature, three focus topics will be discussed: (1) the system-on-a-chip (SoC) design considerations of the monolithic polar transmitter using ET; and (2) the design of highly-efficient envelope amplifier capable of achieving the high efficiency, current, bandwidth, accuracy and noise specifications required for wideband signals; and (3) the design of high-efficiency monolithic Si-based power amplifiers (PAs) suitable for ET-based RF polar transmitters.
KW - Envelope-elimination-and-restoration (EER)
KW - Envelope-tracking (ET)
KW - High-efficiency DC-DC converter
KW - Monolithic RF SiGe Power amplifier (PA)
KW - Polar transmitters
KW - Power-added efficiency (PAE)
KW - Switch-mode PA
KW - System-on-a-chip (SoC)
KW - Wideband transmitter
UR - http://www.scopus.com/inward/record.url?scp=58049116685&partnerID=8YFLogxK
U2 - 10.1109/BIPOL.2008.4662712
DO - 10.1109/BIPOL.2008.4662712
M3 - Conference contribution
AN - SCOPUS:58049116685
SN - 9781424427260
T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
SP - 57
EP - 64
BT - 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Y2 - 13 October 2008 through 15 October 2008
ER -