Design of highly-efficient monolithic silicon power amplifiers using envelope-tracking for broadband wireless applications

Donald Y.C. Lie, Jerry Lopez, Yan Li, Jerry Tsay

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A couple of design examples on highly-efficient fully-monolithic silicon-based envelope-tracking power amplifiers (ET-PA) for broadband wireless applications will be presented. These RF PAs are designed in SiGe BiCMOS technologies in either common-emitter (CE) or cascode topologies, as SiGe can deliver higher POUT with better breakdown robustness than their CMOS counterparts. The envelope modulator (EM) ICs are designed in CMOS to mate with PAs to form high-efficient monolithic SiGe BiCMOS ET-PA systems. Using 5/10/20 MHz LTE 16-QAM modulated inputs, these ET-PA systems can achieve 24-28 dBm linear POUT, passing stringent LTE linearity specs with overall system power-added-efficiency (PAE) above 40% without predistortion.

Original languageEnglish
Title of host publication2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1085-1088
Number of pages4
ISBN (Electronic)9784902339314
StatePublished - Mar 25 2014
Event2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan
Duration: Nov 4 2014Nov 7 2014

Publication series

Name2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014

Conference

Conference2014 Asia-Pacific Microwave Conference, APMC 2014
Country/TerritoryJapan
CitySendai
Period11/4/1411/7/14

Keywords

  • Envelope modulator (EM)
  • Envelope shaping method
  • Envelope-tracking (ET)
  • Long-term evolution (LTE)
  • Power amplifier (PA)
  • SiGe
  • Through-silicon-via (TSV)

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