Demonstration of Constant-Gate-Charge Scaling to Increase the Robustness of Silicon Carbide Power MOSFETs

James A. Cooper, Dallas T. Morisette, Madankumar Sampath, Cheryl A. Stellman, Stephen B. Bayne, Michael J. Westphal, Clinton H. Anderson, John A. Ransom

Research output: Contribution to journalArticlepeer-review

Abstract

We introduce the concept of constant-gate-charge scaling to increase the short-circuit withstand time of SiC power MOSFETs without increasing their ON-state resistance, gate charge, or oxide field. In gate-charge scaling, we scale the oxide thickness and gate drive voltage, keeping the oxide field constant. Short-circuit measurements on 1200 V SiC double-implanted MOSFETs (DMOSFETs) confirm that short-circuit withstand times can be increased by 2- 4times without increasing ON-resistance, simply by reducing the oxide thickness and the gate drive voltage.

Original languageEnglish
Article number9506992
Pages (from-to)4577-4581
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume68
Issue number9
DOIs
StatePublished - Sep 2021

Keywords

  • Saturation current
  • specific on-resistance

Fingerprint

Dive into the research topics of 'Demonstration of Constant-Gate-Charge Scaling to Increase the Robustness of Silicon Carbide Power MOSFETs'. Together they form a unique fingerprint.

Cite this