The fabrication and dc characteristics of AlGaN/GaN-based heterostructure field-effect transistors (HFET) were reported. The device grown on sapphire substrates has a high drain-current-driving and gate-control capabilities. The incorporation of the SiO2 insulated gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the channel carrier mobility. The device is capable to deliver high electron density yet ensures an excellent pinch-off property.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Dec 9 2002|