TY - JOUR
T1 - Delta-doped AlGaN/GaN heterostructure field-effect transistors with incorporation of AlN epilayers
AU - Fan, Z. Y.
AU - Nakarmi, M. L.
AU - Lin, J. Y.
AU - Jiang, H. X.
PY - 2003
Y1 - 2003
N2 - The simulation and experiment results of delta-doped AlGaN/GaN heterostructure field-effect transistors (HFETs) with the incorporation of highly-resistive AlN epilayer are reported. The high quality AlN epilayer is used as the dislocation filter for the HFET structure growth, and the high resistivity of AlN also removes the parasitic conduction related with the GaN bulk buffer. Delta doping can reduce gate leakage, further more, our simulation and growth results demonstrate that delta-doping in the barrier is more effective than uniform doping scheme to increase the sheet electron density. The influence of spacer layer thickness on the electron mobility and sheet electron density is also presented. The DC characterization of the fabricated devices shows our structure has a very high performance with a maximum current ∼ 1 A/mm.
AB - The simulation and experiment results of delta-doped AlGaN/GaN heterostructure field-effect transistors (HFETs) with the incorporation of highly-resistive AlN epilayer are reported. The high quality AlN epilayer is used as the dislocation filter for the HFET structure growth, and the high resistivity of AlN also removes the parasitic conduction related with the GaN bulk buffer. Delta doping can reduce gate leakage, further more, our simulation and growth results demonstrate that delta-doping in the barrier is more effective than uniform doping scheme to increase the sheet electron density. The influence of spacer layer thickness on the electron mobility and sheet electron density is also presented. The DC characterization of the fabricated devices shows our structure has a very high performance with a maximum current ∼ 1 A/mm.
UR - http://www.scopus.com/inward/record.url?scp=2942642307&partnerID=8YFLogxK
U2 - 10.1557/proc-798-y10.23
DO - 10.1557/proc-798-y10.23
M3 - Conference article
AN - SCOPUS:2942642307
SN - 0272-9172
VL - 798
SP - 101
EP - 105
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - GaN and Related Alloys - 2003
Y2 - 1 December 2003 through 5 December 2003
ER -