The results of photoluminescence (PL) fatigue in anodized porous silicon (PS) samples aged in air for a few months are reported. The extent of fatigue is found to be stronger in the short wavelength region, compared with the long wavelength PL, revealing the different initial or final states of PL in these regions. A possible explanation for the PL degradation and fatigue mechanism in PS is discussed.
|Number of pages||4|
|Journal||International Journal of Optoelectronics|
|State||Published - Jul 1994|