Degradation of luminescence and fatigue effects in porous silicon

V. Grivickas; A. Bernussi; P. Basmaji; B. Matvienko; J. Kolenda

Degradation of luminescence and fatigue effects in porous silicon

V. Grivickas, A. Bernussi, P. Basmaji, B. Matvienko, J. Kolenda

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The results of photoluminescence (PL) fatigue in anodized porous silicon (PS) samples aged in air for a few months are reported. The extent of fatigue is found to be stronger in the short wavelength region, compared with the long wavelength PL, revealing the different initial or final states of PL in these regions. A possible explanation for the PL degradation and fatigue mechanism in PS is discussed.

Original language	English
Pages (from-to)	311-314
Number of pages	4
Journal	International Journal of Optoelectronics
Volume	9
Issue number	4
State	Published - Jul 1994

Cite this

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title = "Degradation of luminescence and fatigue effects in porous silicon",

abstract = "The results of photoluminescence (PL) fatigue in anodized porous silicon (PS) samples aged in air for a few months are reported. The extent of fatigue is found to be stronger in the short wavelength region, compared with the long wavelength PL, revealing the different initial or final states of PL in these regions. A possible explanation for the PL degradation and fatigue mechanism in PS is discussed.",

author = "V. Grivickas and A. Bernussi and P. Basmaji and B. Matvienko and J. Kolenda",

year = "1994",

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T1 - Degradation of luminescence and fatigue effects in porous silicon

AU - Grivickas, V.

AU - Bernussi, A.

AU - Basmaji, P.

AU - Matvienko, B.

AU - Kolenda, J.

PY - 1994/7

Y1 - 1994/7

N2 - The results of photoluminescence (PL) fatigue in anodized porous silicon (PS) samples aged in air for a few months are reported. The extent of fatigue is found to be stronger in the short wavelength region, compared with the long wavelength PL, revealing the different initial or final states of PL in these regions. A possible explanation for the PL degradation and fatigue mechanism in PS is discussed.

AB - The results of photoluminescence (PL) fatigue in anodized porous silicon (PS) samples aged in air for a few months are reported. The extent of fatigue is found to be stronger in the short wavelength region, compared with the long wavelength PL, revealing the different initial or final states of PL in these regions. A possible explanation for the PL degradation and fatigue mechanism in PS is discussed.

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M3 - Article

AN - SCOPUS:0028478998

SN - 0952-5432

VL - 9

SP - 311

EP - 314

JO - International Journal of Optoelectronics

JF - International Journal of Optoelectronics

IS - 4

ER -

Degradation of luminescence and fatigue effects in porous silicon

Abstract

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