Degradation of luminescence and fatigue effects in porous silicon

V. Grivickas, A. Bernussi, P. Basmaji, B. Matvienko, J. Kolenda

Research output: Contribution to journalArticlepeer-review


The results of photoluminescence (PL) fatigue in anodized porous silicon (PS) samples aged in air for a few months are reported. The extent of fatigue is found to be stronger in the short wavelength region, compared with the long wavelength PL, revealing the different initial or final states of PL in these regions. A possible explanation for the PL degradation and fatigue mechanism in PS is discussed.

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalInternational Journal of Optoelectronics
Issue number4
StatePublished - Jul 1994


Dive into the research topics of 'Degradation of luminescence and fatigue effects in porous silicon'. Together they form a unique fingerprint.

Cite this