TY - JOUR
T1 - Defect theory
T2 - Elusive state-of-the-art
AU - Estreicher, Stefan K.
N1 - Funding Information:
The author is most thankful to Manuel Cardona, David Drabold, and Michael Stavola for useful comments. Thanks are also due to Jason McAfee, Mahdi Sanati, and Damien West for letting me present here some unpublished results. SKE’s research is supported by the R. A. Welch Foundation and the National Renewable Energy Laboratory.
PY - 2003/6
Y1 - 2003/6
N2 - An overview of the evolution of defect theory and a discussion of ongoing developments is presented in the article. For semiconductors, all their electrical and optical properties are determined by the type and concentration of defects they contain. Sufficient defect control could once be achieved by 'brute force' methods, such as long high-temperature anneals to precipitate excess unwanted impurities away from the active part of a device.
AB - An overview of the evolution of defect theory and a discussion of ongoing developments is presented in the article. For semiconductors, all their electrical and optical properties are determined by the type and concentration of defects they contain. Sufficient defect control could once be achieved by 'brute force' methods, such as long high-temperature anneals to precipitate excess unwanted impurities away from the active part of a device.
UR - http://www.scopus.com/inward/record.url?scp=0042994152&partnerID=8YFLogxK
U2 - 10.1016/S1369-7021(03)00631-X
DO - 10.1016/S1369-7021(03)00631-X
M3 - Article
AN - SCOPUS:0042994152
SN - 1369-7021
VL - 6
SP - 26
EP - 35
JO - Materials Today
JF - Materials Today
IS - 6
ER -