Defect symmetry from stress transient spectroscopy

J. M. Meese, J. W. Farmer, C. D. Lamp

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

Uniaxial stress has been used with transient spectroscopy to study the level at Ec-0.17 eV in neutron-irradiated silicon. The defect symmetry, observed stress-induced electronic redistribution, and preferential stress-induced defect orientation have been determined and the reorientation activation energy has been measured. All of these effects are consistent with the A center.

Original languageEnglish
Pages (from-to)1286-1289
Number of pages4
JournalPhysical Review Letters
Volume51
Issue number14
DOIs
StatePublished - 1983

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