The grain size of AlxGa1-xN films grown on c-plane sapphire substrates was been measured using the X-ray diffraction (XRD) technique. The grain size increases with increasing Al content. It is evident that films with large grain sizes have less defect scattering, and hence, conductivity increases with the grain size. Apparently, the addition of Al to the epilayer increases conductivity.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics|
|State||Published - Mar 2003|
- Dislocation density
- X-ray diffraction