Defect reduction in AlxGa1-xN films grown by metal organic chemical vapor deposition

Young Shin Park, Kun Ho Kim, Jeoung Ju Lee, Hyeon Soo Kim, Tae Won Kang, Hong Xing Jiang, Jing Yu Lin

Research output: Contribution to journalArticle

Abstract

The grain size of AlxGa1-xN films grown on c-plane sapphire substrates was been measured using the X-ray diffraction (XRD) technique. The grain size increases with increasing Al content. It is evident that films with large grain sizes have less defect scattering, and hence, conductivity increases with the grain size. Apparently, the addition of Al to the epilayer increases conductivity.

Original languageEnglish
Pages (from-to)1231-1232
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number3
DOIs
StatePublished - Mar 2003

Keywords

  • AlGaN
  • Conductivity
  • Dislocation density
  • X-ray diffraction

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