Defect reduction in AlxGa1-xN films grown by metal organic chemical vapor deposition

Young Shin Park; Kun Ho Kim; Jeoung Ju Lee; Hyeon Soo Kim; Tae Won Kang; Hong Xing Jiang; Jing Yu Lin

doi:10.1143/jjap.42.1231

Defect reduction in Al_xGa_1-xN films grown by metal organic chemical vapor deposition

Young Shin Park, Kun Ho Kim, Jeoung Ju Lee, Hyeon Soo Kim, Tae Won Kang, Hong Xing Jiang, Jing Yu Lin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The grain size of Al_xGa_1-xN films grown on c-plane sapphire substrates was been measured using the X-ray diffraction (XRD) technique. The grain size increases with increasing Al content. It is evident that films with large grain sizes have less defect scattering, and hence, conductivity increases with the grain size. Apparently, the addition of Al to the epilayer increases conductivity.

Original language	English
Pages (from-to)	1231-1232
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	3
DOIs	https://doi.org/10.1143/jjap.42.1231
State	Published - Mar 2003

Keywords

AlGaN
Conductivity
Dislocation density
X-ray diffraction

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10.1143/jjap.42.1231

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title = "Defect reduction in AlxGa1-xN films grown by metal organic chemical vapor deposition",

abstract = "The grain size of AlxGa1-xN films grown on c-plane sapphire substrates was been measured using the X-ray diffraction (XRD) technique. The grain size increases with increasing Al content. It is evident that films with large grain sizes have less defect scattering, and hence, conductivity increases with the grain size. Apparently, the addition of Al to the epilayer increases conductivity.",

keywords = "AlGaN, Conductivity, Dislocation density, X-ray diffraction",

author = "Park, {Young Shin} and Kim, {Kun Ho} and Lee, {Jeoung Ju} and Kim, {Hyeon Soo} and Kang, {Tae Won} and Jiang, {Hong Xing} and Lin, {Jing Yu}",

year = "2003",

month = mar,

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AU - Park, Young Shin

AU - Kim, Kun Ho

AU - Lee, Jeoung Ju

AU - Kim, Hyeon Soo

AU - Kang, Tae Won

AU - Jiang, Hong Xing

AU - Lin, Jing Yu

PY - 2003/3

Y1 - 2003/3

N2 - The grain size of AlxGa1-xN films grown on c-plane sapphire substrates was been measured using the X-ray diffraction (XRD) technique. The grain size increases with increasing Al content. It is evident that films with large grain sizes have less defect scattering, and hence, conductivity increases with the grain size. Apparently, the addition of Al to the epilayer increases conductivity.

AB - The grain size of AlxGa1-xN films grown on c-plane sapphire substrates was been measured using the X-ray diffraction (XRD) technique. The grain size increases with increasing Al content. It is evident that films with large grain sizes have less defect scattering, and hence, conductivity increases with the grain size. Apparently, the addition of Al to the epilayer increases conductivity.

KW - AlGaN

KW - Conductivity

KW - Dislocation density

KW - X-ray diffraction

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U2 - 10.1143/jjap.42.1231

DO - 10.1143/jjap.42.1231

M3 - Article

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 3

ER -

Defect reduction in Al_xGa_1-xN films grown by metal organic chemical vapor deposition

Abstract

Keywords

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