Deep UV AlGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates

S. Nikishin, B. Borisov, V. Kuryatkov, A. Usikov, V. Dmitriev, M. Holtz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations


We report the electrical and optical properties of deep ultraviolet light emitting diodes (LEDs) based on digital alloy structures (DAS) of AlN/Al 0.08Ga0.92N grown by gas source molecular beam epitaxy with ammonia on sapphire substrates and AlGaN/sapphire templates. AlGaN/sapphire templates were grown by recently developed stress controlled hydride vapor phase epitaxy (HVPE). For DAS with effective bandgap of 5.1 eV we obtain room temperature electron concentrations up to 1×1019 cm -3 and hole concentrations of 1×1018 cm -3. Based on these results we prepared double heterostructure (DHS) LEDs operating in the range of 250 to 290 nm. The emission wavelengths were controlled through the effective bandgap of the active region. The possible ways for increase of LED's efficiency are discussed. We observed significant improvement in the room temperature luminescence efficiency (by factor of 100) of AlGaN quantum wells when a transition growth mode is induced by reduced flux of ammonia. We found that active layer grown on HVPE AlGaN/sapphire substrates have higher luminescence efficiency (by factor of 3) than DAS grown on sapphire.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices
StatePublished - 2006
EventGallium Nitride Materials and Devices - San Jose, CA, United States
Duration: Jan 23 2006Jan 25 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceGallium Nitride Materials and Devices
Country/TerritoryUnited States
CitySan Jose, CA


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