Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

96 Scopus citations

Abstract

Optical transitions in Aluminium nitride (AlN) epilayers were studied using deep ultraviolet picosecond time-resolved photoluminescence spectroscopy. Using metalorganic chemical vapor deposition on sapphire substrates AlN epilayers of high optical qualities were obtained. Photoluminescence measurements revealed the recombination lifetimes of free exciton transitions and donor bound excitons were around 50 and 80 ps respectively.

Original languageEnglish
Pages (from-to)1694-1696
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number11
DOIs
StatePublished - Mar 17 2003

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