Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers

K. B. Nam; J. Li; M. L. Nakarmi; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1559659

Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers

K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, H. X. Jiang

Research output: Contribution to journal › Article › peer-review

100 Scopus citations

Abstract

Optical transitions in Aluminium nitride (AlN) epilayers were studied using deep ultraviolet picosecond time-resolved photoluminescence spectroscopy. Using metalorganic chemical vapor deposition on sapphire substrates AlN epilayers of high optical qualities were obtained. Photoluminescence measurements revealed the recombination lifetimes of free exciton transitions and donor bound excitons were around 50 and 80 ps respectively.

Original language	English
Pages (from-to)	1694-1696
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	11
DOIs	https://doi.org/10.1063/1.1559659
State	Published - Mar 17 2003

Access to Document

10.1063/1.1559659

Cite this

@article{b61771fe8d584c82ab5072bf811faf48,

title = "Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers",

abstract = "Optical transitions in Aluminium nitride (AlN) epilayers were studied using deep ultraviolet picosecond time-resolved photoluminescence spectroscopy. Using metalorganic chemical vapor deposition on sapphire substrates AlN epilayers of high optical qualities were obtained. Photoluminescence measurements revealed the recombination lifetimes of free exciton transitions and donor bound excitons were around 50 and 80 ps respectively.",

author = "Nam, {K. B.} and J. Li and Nakarmi, {M. L.} and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2003",

month = mar,

day = "17",

doi = "10.1063/1.1559659",

language = "English",

volume = "82",

pages = "1694--1696",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "11",

}

TY - JOUR

T1 - Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers

AU - Nam, K. B.

AU - Li, J.

AU - Nakarmi, M. L.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2003/3/17

Y1 - 2003/3/17

N2 - Optical transitions in Aluminium nitride (AlN) epilayers were studied using deep ultraviolet picosecond time-resolved photoluminescence spectroscopy. Using metalorganic chemical vapor deposition on sapphire substrates AlN epilayers of high optical qualities were obtained. Photoluminescence measurements revealed the recombination lifetimes of free exciton transitions and donor bound excitons were around 50 and 80 ps respectively.

AB - Optical transitions in Aluminium nitride (AlN) epilayers were studied using deep ultraviolet picosecond time-resolved photoluminescence spectroscopy. Using metalorganic chemical vapor deposition on sapphire substrates AlN epilayers of high optical qualities were obtained. Photoluminescence measurements revealed the recombination lifetimes of free exciton transitions and donor bound excitons were around 50 and 80 ps respectively.

UR - http://www.scopus.com/inward/record.url?scp=0037451382&partnerID=8YFLogxK

U2 - 10.1063/1.1559659

DO - 10.1063/1.1559659

M3 - Article

AN - SCOPUS:0037451382

SN - 0003-6951

VL - 82

SP - 1694

EP - 1696

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this