Deep ultraviolet AlGaInN-based light-emitting diodes on Si(111) and sapphire

Engineering & Materials Science

• Ammonia 34%
• Buffer layers 91%
• Electroluminescence 50%
• Electrons 32%
• Gas source molecular beam epitaxy 69%
• Hole concentration 60%
• Light emitting diodes 63%
• Sapphire 85%
• Temperature 25%
• Wavelength 28%

Physics & Astronomy

• ammonia 32%
• buffers 54%
• electroluminescence 32%
• electrons 13%
• gases 16%
• light emitting diodes 50%
• mesas 36%
• molecular beam epitaxy 27%
• quantum wells 49%
• room temperature 35%
• sapphire 54%
• ultraviolet radiation 31%
• wavelengths 15%

Chemistry

• Ambient Reaction Temperature 35%
• Ammonia 24%
• Buffer Solution 41%
• Compound Mobility 48%
• Electroluminescence 33%
• Electron Particle 17%
• Emission Wavelength 34%
• Gas 16%
• Hole Concentration 48%
• Molecular Beam Epitaxy 45%
• Superlattice 65%