TY - JOUR
T1 - Deep ultraviolet AlGaInN-based light-emitting diodes on Si(111) and sapphire
AU - Kipshidze, G.
AU - Kuryatkov, V.
AU - Borisov, B.
AU - Nikishin, S.
AU - Holtz, M.
AU - Chu, S. N.G.
AU - Temkin, H.
PY - 2002/8
Y1 - 2002/8
N2 - Ultraviolet light-emitting diodes (LEDs) with emission wavelength as short as 280 nm, grown by gas source molecular beam epitaxy with ammonia, are described. The typical multi-quantum well (MQW) structure LED consists of an AlN buffer layer deposited on Si(111) or sapphire, followed by a (Al)GaN buffer layer and two superlattice structures, n- and p-type, with the MQW active region placed between them. Room temperature Hall measurements of n- and p-type AlN/AlGaInN superlattice structures show average hole concentrations of 1 × 1018 cm-3, with mobility of 3-4 cm2/Vs, and electron concentrations of 3 × 1019 cm-3, with mobility of 10-20 cm2/Vs. Room temperature electroluminescence spectra of mesa-etched devices show predominant emission at 280 nm.
AB - Ultraviolet light-emitting diodes (LEDs) with emission wavelength as short as 280 nm, grown by gas source molecular beam epitaxy with ammonia, are described. The typical multi-quantum well (MQW) structure LED consists of an AlN buffer layer deposited on Si(111) or sapphire, followed by a (Al)GaN buffer layer and two superlattice structures, n- and p-type, with the MQW active region placed between them. Room temperature Hall measurements of n- and p-type AlN/AlGaInN superlattice structures show average hole concentrations of 1 × 1018 cm-3, with mobility of 3-4 cm2/Vs, and electron concentrations of 3 × 1019 cm-3, with mobility of 10-20 cm2/Vs. Room temperature electroluminescence spectra of mesa-etched devices show predominant emission at 280 nm.
UR - http://www.scopus.com/inward/record.url?scp=0036671577&partnerID=8YFLogxK
U2 - 10.1002/1521-396X(200208)192:2<286::AID-PSSA286>3.0.CO;2-2
DO - 10.1002/1521-396X(200208)192:2<286::AID-PSSA286>3.0.CO;2-2
M3 - Conference article
AN - SCOPUS:0036671577
VL - 192
SP - 286
EP - 291
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 2
Y2 - 11 March 2002 through 15 March 2002
ER -