Deep ultraviolet AlGaInN-based light-emitting diodes on Si(111) and sapphire

G. Kipshidze, V. Kuryatkov, B. Borisov, S. Nikishin, M. Holtz, S. N.G. Chu, H. Temkin

Research output: Contribution to journalConference article

38 Scopus citations

Abstract

Ultraviolet light-emitting diodes (LEDs) with emission wavelength as short as 280 nm, grown by gas source molecular beam epitaxy with ammonia, are described. The typical multi-quantum well (MQW) structure LED consists of an AlN buffer layer deposited on Si(111) or sapphire, followed by a (Al)GaN buffer layer and two superlattice structures, n- and p-type, with the MQW active region placed between them. Room temperature Hall measurements of n- and p-type AlN/AlGaInN superlattice structures show average hole concentrations of 1 × 1018 cm-3, with mobility of 3-4 cm2/Vs, and electron concentrations of 3 × 1019 cm-3, with mobility of 10-20 cm2/Vs. Room temperature electroluminescence spectra of mesa-etched devices show predominant emission at 280 nm.

Original languageEnglish
Pages (from-to)286-291
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume192
Issue number2
DOIs
StatePublished - Aug 2002
Event4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain
Duration: Mar 11 2002Mar 15 2002

Fingerprint Dive into the research topics of 'Deep ultraviolet AlGaInN-based light-emitting diodes on Si(111) and sapphire'. Together they form a unique fingerprint.

  • Cite this