Deep levels associated with triplet impurity complexes in GaP

A theory of the deep energy levels produced by triplet impurity complexes in semiconductors is outlined and applied to GaP. Results are presented for the chemical trends in the deep levels of a1 and b1 symmetry for selected complexes in this material. Among the interesting results predicted are that, by selected complexing of impurities, the deep levels of a particular impurity can be significantly altered from their isolated impurity values.