Damage and strain in pseudomorphic vs relaxed GexSi1-x layers on Si(100) generated by Si ion irradiation

D. Y.C. Lie, A. Vantomme, F. Eisen, T. Vreeland, M. A. Nicolet, T. K. Carns, K. L. Wang, B. Holländer

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Abstract

We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed GexSi1-x films grown on Si(100) substrates. The ion range is such that the Si/GexSi1-x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed GexSi1-x layers of similar x for irradiation doses up to 2.5 × 1014 Si/cm2 is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed.

Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalJournal of Electronic Materials
Volume23
Issue number4
DOIs
StatePublished - Apr 1 1994

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Keywords

  • GeSi
  • Si ion irradiation
  • irradiation damage

Cite this

Lie, D. Y. C., Vantomme, A., Eisen, F., Vreeland, T., Nicolet, M. A., Carns, T. K., Wang, K. L., & Holländer, B. (1994). Damage and strain in pseudomorphic vs relaxed GexSi1-x layers on Si(100) generated by Si ion irradiation. Journal of Electronic Materials, 23(4), 369-373. https://doi.org/10.1007/BF02671216