Abstract
We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed GexSi1-x films grown on Si(100) substrates. The ion range is such that the Si/GexSi1-x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed GexSi1-x layers of similar x for irradiation doses up to 2.5 × 1014 Si/cm2 is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed.
Original language | English |
---|---|
Pages (from-to) | 369-373 |
Number of pages | 5 |
Journal | Journal of Electronic Materials |
Volume | 23 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1994 |
Keywords
- GeSi
- Si ion irradiation
- irradiation damage